Measuring stacking fault densities in shock-compressed FCC crystals using in situ x-ray diffraction

被引:18
|
作者
Rosolankova, K. [1 ]
Wark, J. S.
Bringa, E. M.
Hawreliak, J.
机构
[1] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England
[2] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA
关键词
D O I
10.1088/0953-8984/18/29/014
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A method is presented of in situ measurements of stacking fault densities in shocked face-centred-cubic (FCC) crystals using x-ray diffraction. Using results from both the second and fourth diffraction orders, wherein shifts in the Bragg peaks due to faulting are accounted for, we calculated fault densities present in a molecular dynamics ( MD) simulation of shocked single crystal of copper. The results are in good quantitative agreement with dislocation density measurements inferred directly from the MD simulation. The x-ray diffraction method thus presents a real possibility for experimental determination in real time of dislocation densities in crystals during shock wave passage.
引用
收藏
页码:6749 / 6757
页数:9
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