A New Nonlinear Circuit Model For GaAs Gunn Diode in Oscillator

被引：0
|
作者：
Liang, Li [1 ]
Bo, Zhang [1 ]
机构：
[1] Univ Elect Sci & Technol China, Sch Elect Engn, Chengdu 610054, Peoples R China
来源：
ISAPE 2008: THE 8TH INTERNATIONAL SYMPOSIUM ON ANTENNAS, PROPAGATION AND EM THEORY, PROCEEDINGS, VOLS 1-3 | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An innovative nonlinear circuit model for Gunn diode in oscillator is introduced based on the physical mechanism of Gunn diode. This model interprets the nonlinear harmonics character of Gunn diode. The simulation prediction and experiment of nonlinear model show feasibility of the nonlinear circuit model for Gunn diode in oscillator.
引用
收藏
页码：1294 / 1297
页数：4
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