An Improved Nonlinear Circuit Model for GaAs Gunn Diode in W-Band Oscillator

被引：1
|
作者：
Zhang, Bo [1 ]
Fan, Yong [1 ]
Zhang, Yonghong [1 ]
机构：
[1] Univ Elect Sci & Technol China, Chengdu 610054, Peoples R China
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2009年 / E92C卷 / 12期
关键词：
millimeter-wave; GaAs Gunn diode; nonlinear circuit model; physical mechanism; oscillator; SIMULATION; OPERATION; DEVICES; GHZ;
D O I：
10.1587/transele.E92.C.1490
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An improved nonlinear circuit model for a GaAs Gunn diode in an oscillator is proposed based on the physical mechanism of the diode. This model interprets the nonlinear harmonic character on the Gunn diode. Its equivalent nonlinear circuit of which can assist in the design of the Gunn oscillator and help in the analysis of the fundamental and harmonic characteristics of the GaAs Gunn diode. The simulation prediction and the experiment of the Gunn oscillator show the feasibility of the nonlinear circuit model for the GaAs Gunn oscillator.
引用
收藏
页码：1490 / 1495
页数：6
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