Facet reflectivity of a spot-size-converter integrated semiconductor optical amplifier

被引:12
|
作者
Shim, J [1 ]
Kim, J
Jang, D
Eo, Y
Arai, S
机构
[1] Hanyang Univ, Dept Elect & Comp Engn, Ansan, Kyungki, South Korea
[2] Samsung Elect Co Ltd, Div Optoelect, Kyonggi Do, South Korea
[3] Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Meguro Ku, Tokyo 152, Japan
关键词
angled facet; facet reflectivity; semiconductor optical amplifier; spot-size-converter; window;
D O I
10.1109/JQE.2002.1005417
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Traveling-wave type, semiconductor optical amplifiers (SOAs) integrated with a spot-size-converter (SSC) are extensively studied for the improvement of coupling efficiency with single-mode fiber and for cost reduction in packaging. In this paper, the structural dependence of the SSC on the effective facet reflectivity R-eff is investigated theoretically as well as experimentally. It is shown that not only a sufficient mode-conversion in a SSC region, but also an introduction of angled facets, are essential for reducing R-eff. A small gain ripple (less than 0.1 dB) in an amplified spontaneous emission (ASE) spectrum, fiber-to-fiber gain of 26 dB, and saturation output power of 7 dBm are observed at the fabricated SOA, which consists of a window length of 20 gm, facet angle of 7degrees, and anti-reflection coated facet of less than 1% reflectivity.
引用
收藏
页码:665 / 673
页数:9
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