Effect of capping layer on the ferroelectricity of hafnium oxide

被引：5

作者：

Chang, Jui-Hsuan ^{[1
]}

Zheng, Chen-Gui ^{[1
]}

Chen, Hsuan-Han ^{[2
]}

Chen, Pei-Tien ^{[1
]}

Liu, Cun-Bo ^{[1
]}

Huang, Kai-Yang ^{[1
]}

Hsu, Hsiao-Hsuan ^{[1
]}

Cheng, Chun-Hu ^{[3
]}

Chou, Wu-Ching ^{[2
]}

Han, Su-Ting ^{[4
]}

机构：

[1] Natl Taipei Univ Technol, Inst Mat Sci & Engn, Taipei, Taiwan

[2] Natl Yang Ming Chiao Tung Univ, Dept Electrophys, Hsinchu, Taiwan

[3] Natl Taiwan Normal Univ, Dept Mechatron Engn, Taipei, Taiwan

[4] Shenzhen Univ, Inst Microscale Optoelect, Shenzhen, Peoples R China

来源：

THIN SOLID FILMS | 2022年 / 753卷

关键词：

Hafnium Oxide; Ferroelectric Polarization; Aluminum Oxide; Capping Layer; Power Consumption;

D O I：

10.1016/j.tsf.2022.139274

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, we investigate the effect of a capping layer of aluminum oxide (AlOx) on dopant-free hafnium-oxide (HfO2) ferroelectric layer. According to our experimental results, the AlOx-capped HfO2 ferroelectric capacitor exhibits the significant improvement on ferroelectric polarization strength and also presents a comparable electrical stress resistance in comparison with control HfO2 ferroelectric capacitor with a very weak ferroelectric hysteresis. An additional nitrogen treatment on AlOx capping layer effectively alleviate the stress-induced generation of defect traps near the interface of tantalum nitride (TaN) electrode under negative-bias voltage stress. Therefore, the performance improvement can be ascribed to the introduction of AlOx capping layer and well controlled nitrogen plasma treatment to improve interface traps and stabilize the ferroelectric phase transformation during high-temperature annealing process.

引用

页数：7

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