Temperature and time-resolved dependence of photoluminescence in InGaN quantum dots

被引：1
|
作者：
Chen, Cheng [1 ]
Qiu, Zhi Ren [1 ]
Shu, Xiang Ping [1 ]
Li, Zeng Cheng [2 ]
Liu, Jian Ping [2 ]
Feng, Zhe Chuan [3 ,4 ]
机构：
[1] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nano tech & Nano bion, Suzhou 215123, Peoples R China
[3] National Taiwan Univ, Ctr Emerging & Adv Devices, Taipei 10617, Taiwan
[4] National Taiwan Univ, Dept Elect Engn, Inst Photon & Optoelectron, Taipei 10617, Taiwan
来源：
ADVANCED ENGINEERING MATERIALS III, PTS 1-3 | 2013年 / 750-752卷
关键词：
InGaN quantum dots; AFM; photoluminescence; time resolved photoluminescence (TRPL); temperature dependence; GROWTH;
D O I：
10.4028/www.scientific.net/AMR.750-752.927
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Temperature dependence of photoluminescence (PL) and time resolved photoluminescence (TRPL) were obtained by two experimental systems. The relative intensity and peak position of PL show S-shift variation with increasing temperature, which may result from temperature induce carriers' redistribution. Fast decay time and slow decay time were fitted by double exponential function from decay curves of TRPL at different emission energy, and the decreasing trend of both fast decay and slow decay time with increasing photon energy is attributed to various channels of recombination in shallow and deep localized states.
引用
收藏
页码：927 / +
页数：2
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