Structural, magnetic and magnetotransport properties of thin films of the Heusler alloys Cu2MnAl, Co2MnSi, Co2MnGe and Co2MnSn

被引:125
|
作者
Geiersbach, U [1 ]
Bergmann, A [1 ]
Westerholt, K [1 ]
机构
[1] Ruhr Univ Bochum, Inst Expt Phys 4, D-44780 Bochum, Germany
关键词
half-metallic ferromagnets; spin electronics; Heusler compounds;
D O I
10.1016/S0304-8853(01)00866-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report structural, magnetic and transport properties of thin films of the Heusler compounds Cu2MnAl, Co2MnSi, Co2MnGe and Co2MnSn prepared by RF-sputtering. Cu2MnAl grows epitaxially on MgO (100), for the Co-based Heusler compounds it is possible to induce (110)-growth on Al2O3 a-plane by the use of metallic seed layers. The Co-based alloy thin films grow in the ordered L2(1) structure and essentially preserve the full ferromagnetic magnetization of the bulk. The electrical conductivity is rather low indicating substantial magnetic or structural disorder. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:546 / 549
页数:4
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