A practical design method for a rapid thermal processing system

被引:1
|
作者
Habuka, H [1 ]
Miyashita, H [1 ]
Sakurai, T [1 ]
Suzuki, T [1 ]
Takeuchi, T [1 ]
Aihara, M [1 ]
机构
[1] Yokohama Natl Univ, Dept Chem Engn Sci, Yokohama, Kanagawa 2408501, Japan
关键词
silicon; rapid thermal processing; ray tracing method; reflector design method;
D O I
10.1143/JJAP.43.833
中图分类号
O59 [应用物理学];
学科分类号
摘要
In order to develop a method to design a high performance rapid thermal processing system, particularly for designing the details of its reflector geometry, a practical method is studied by linking quick experiments with calculations using a direct approach model using ray trace simulation (DARTS). The typical procedure is as follows: (i) The heating temperatures of silicon wafers under the newly designed reflectors are predicted by calculations using the DARTS model, when the reflectors are made of high-reflectivity and low-reflectivity materials. (ii) The silicon wafer temperature is experimentally measured under quickly fabricated reflectors made of low-reflectivity materials, such as mirror-polished stainless steel. (iii) The desirable design of the reflector made of high-reflectivity materials, such as electroplated gold, is determined based on the relationship obtained at step (i) between the silicon wafer temperatures of heating under the high- and low-reflectivity reflectors.
引用
收藏
页码:833 / 838
页数:6
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