Silicon carbide microwave limiters

被引：1

作者：

Syrkin, A ^{[1
]}

Dmitriev, V

Lapidus, A

机构：

[1] Technol & Devices Int Inc, Gaithersburg, MD 20877 USA

[2] Insight Prod Co, Brighton, MA 02135 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

microwave power limiters; Schottky diodes; SiC microwave devices;

D O I：

10.4028/www.scientific.net/MSF.389-393.1411

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we report on the first microwave limiters fabricated from silicon carbide. Packaged limiter circuit was fabricated using 6H-SiC Schottky diodes as an output power-limiting element. Ni based metalization was employed implementing all nickel technology for ohmic and Schottky contacts fabrication. Small signal insertion and return loss were measured for fabricated devices in the frequency band from 0.04 to 2.00 GHz. Fabricated devices operate as microwave limiters up to 0.6 GHz.

引用

页码：1411 / 1414

页数：4

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