Comparison of Ga1-xAlxAs/GaAs and Ga1-xlnxAs/GaAs quantum wells as dependent on Al and In concentrations under intense laser field

In this study, the electronic properties of Ga1-xAlxAs/GaAs and Ga(1-x)ln(x)As/GaAs quantum wells (QWs) are theoretically calculated as dependent on the intense laser field (ILF) and x-concentration value within the effective mass approximation and the envelope function approach. Our results show that the shape of confined potential profile, the energy differences and the dipole moment matrix elements are changed as dependent on the ILF and x-value. The energy levels of different QWs give different values by increasing ILF amplitudes and x-concentrations. In the case of QW under ILF, there are significant modifications of the electrical states of QWs, due to the effects of confining the potential resulting from the applied ILF. I say that the variation of Ga1-xAlxAs/GaAs QW under ILF is more than Ga1-xInxAs/GaAs QW. The numerical results show that the structure parameters have a great effect on the electronic characteristics of these QW structures.