Charge transport in monolayer poly(3-hexylthiophene) thin-film transistors

被引：6
|
作者：
Xu Zong-Xiang [1 ]
Roy, V. A. L. [2 ]
机构：
[1] South Univ Sci & Technol China, Dept Chem, Shenzhen 518055, Peoples R China
[2] City Univ Hong Kong, Dept Phys & Mat Sci, Ctr Superdiamond & Adv Films COSDAF, Kowloon, Hong Kong, Peoples R China
来源：
CHINESE PHYSICS B | 2014年 / 23卷 / 04期
关键词：
field-effect transistor; monolayer P3HT; spin coating; grazing incidence X-ray diffraction; FIELD-EFFECT TRANSISTORS; REGIOREGULAR POLY(3-HEXYLTHIOPHENE); CARRIER MOBILITY; POLYTHIOPHENE; ENHANCEMENT;
D O I：
10.1088/1674-1056/23/4/048501
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
It is found that ultrathin poly(3-hexylthiophene) (P3HT) film with a 2.5 nm-thick layer exhibits a higher mobility of 5.0 x 10(-2) cm(2)/V.s than its bulk counterpart. The crystalline structure of the as- fabricated ultrathin P3HT layer is verified by atomic force microscopy as well as grazing incidence X-ray diffraction. Transient measurements of the as- fabricated transistors reveal the influence of the interface traps on charge transport. These results are explained by the trap energy level distribution at the interface manipulated by layers of polymer film.
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页数：4
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