1.8 kV, 10 mOhm-cm2 4H-SiC JFETs

被引：0
|
作者：
Scofield, James D. [1 ]
Ryu, Sei-Hyung [2 ]
Krishnaswami, Sumi [2 ]
Fatima, Husna [2 ]
Agarwal, Anant [2 ]
机构：
[1] USAF, Res Lab, PRPE, 1950 5th St, Wright Patterson AFB, OH 45433 USA
[2] CREE Inc, Adv Devices, Durham, NC 27703 USA
来源：
SILICON CARBIDE 2006 - MATERIALS, PROCESSING AND DEVICES | 2006年 / 911卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Fabrication and characteristics of high voltage, normally-on JFETs in 4H-SiC are presented. The devices were built on 5x10(15) cm(-3) doped, 12 mu m thick n-type epilayer grown on a n(+) 4H-SiC substrate. A specific on-resistance of 10 m Omega-cm(2) and a blocking voltage of 1.8 kV were measured. Device characteristics were measured for temperatures up to 300 degrees C. An increase of specific on-resistance by a factor of 5 and a decrease in transconductance were observed at 300 degrees C, when compared to the value at room temperature. This is due to a decrease in bulk electron mobility at elevated temperature. A slight negative shift in pinch-off voltage was also observed at 300 degrees C. The devices demonstrated robust DC characteristics for temperatures up to 300 degrees C, and stable high temperature inverter operation in a power DC-DC converter application, using these devices, is reported in this paper.
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页码：419 / +
页数：2
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