Short Circuit and Avalanche Effects in 12V Power Distribution for Automated Driving

被引：3

作者：

Schumi, Stefan ^{[1
]}

Schipperges, Fabian ^{[2
]}

机构：

[1] Infineon Technol AG, Automot Syst Engn, D-85579 Neubiberg, Germany

[2] Dr Ingn Hc F Porsche AG, Dept Elektromobilitat, D-71287 Weissach, Germany

来源：

2019 IEEE INTERNATIONAL CONFERENCE ON MECHATRONICS (ICM) | 2019年

关键词：

fail-operational power distribution; avalanche effect; SPICE simulation;

D O I：

10.1109/icmech.2019.8722917

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the legal deployment of automated vehicles the power distribution within is a key topic. This system has to be fail-operational in case of faults to reach the safe state according to the standard. Switching off loads and short circuits is driving the required switches into avalanche. Exceeding the avalanche energy destroys the device and the system might change into an unsafe state. Through creating a fail-operational power distribution, electric parameters are changing and not all effects are visible immediately. This paper shows results of the SPICE simulation under worst case conditions to analyze specific electric influences within a fail-operational power distribution. Furthermore, not all devices which are expected to go into avalanche are driven into avalanche.

引用

页码：570 / 575

页数：6

共 50 条

[1] BUILD A SHORT-CIRCUIT-PROOF +12V INVERTER WITH ONE IC
DOW, R
EDN MAGAZINE-ELECTRICAL DESIGN NEWS, 1977, 22 (16): : 177 - 178
[2] Circuit controls isolated 12V stepper motor
OHara, M
EDN, 1996, 41 (20) : 70 - 70
[3] A Domino Bootstrapping 12V GaN Driver for Driving an On-chip 650V eGaN Power Switch for 96% High Efficiency
Chen, Hsuan-Yu
Lin, Wei-Tin
Liao, Cheng-Hsiang
Lin, Zong-Yi
Zhang, Zhi-Qiang
Kao, Yu-Yung
Chen, Ke-Horng
Lin, Ying-Hsi
Lin, Shian-Ru
Tsai, Tsung-Yen
2020 IEEE SYMPOSIUM ON VLSI CIRCUITS, 2020,
[4] Novel automated optimization of power MOSFET for 12V input, high-frequency DC-DC converter
Bai, YM
Huang, AQ
ISPSD'03: 2003 IEEE 15TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS PROCEEDINGS, 2003, : 366 - 369
[5] Analysis of the power delivery path from the 12V VR to the microprocessor
Ren, YC
Yao, KW
Xu, M
Lee, FC
APEC 2004: NINETEENTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1-3, 2004, : 285 - 291
[6] Avalanche and Short-Circuit Robustness of 4600 V SiC DMOSFETs
Sundaresan, Siddarth
Mulpuri, Vamsi
Jeliazkov, Stoyan
Singh, Ranbir
2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2019,
[7] Fast charging a 12V battery using wireless power transfer concept
Das, Swagat
Chakraborty, Sohan
2018 INTERNATIONAL CONFERENCE ON RECENT INNOVATIONS IN ELECTRICAL, ELECTRONICS & COMMUNICATION ENGINEERING (ICRIEECE 2018), 2018, : 3156 - 3160
[8] Short-circuit and Avalanche Robustness of SiC Power MOSFETs for Aerospace Power Converters
Borghese, A.
Boccarossa, M.
Riccio, M.
Maresca, L.
Breglio, G.
Irace, A.
2023 IEEE AEROSPACE CONFERENCE, 2023,
[9] Semiconductor Safety Concepts for the Power Distribution of Automated Driving
Schumi, Stefan
Watzenig, Daniel
SAE International Journal of Connected and Automated Vehicles, 2019, 2 (04): : 233 - 239
[10] High gain, high efficiency 12V pHEMT power transistors for WiMAX applications
Bokatius, Mario
Moore, Karen
Miller, Monte
2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6, 2007, : 1061 - 1064

← 1 2 3 4 5 →