Electrical transport properties of a single wall carbon nanotube network

被引：4
|
作者：
Hwang, J. S. [3 ,4 ]
Kim, H. T. [1 ,2 ]
Kim, H. K. [3 ]
Son, M. H. [3 ]
Hwang, S. W. [1 ,2 ]
Ahn, D. [3 ,4 ]
机构：
[1] Korea Univ, Res Ctr Time Domain Nanofunct Devices, Seoul, South Korea
[2] Korea Univ, Sch Elect Engn, Seoul, South Korea
[3] Univ Seoul, Ctr Quantum Informat Proc & Syst, Seoul, South Korea
[4] Univ Seoul, Dept Elect & Comp Engn, Seoul, South Korea
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2009年 / 246卷 / 04期
关键词：
D O I：
10.1002/pssb.200880593
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A single wall carbon nanotube (SWCNT) network is fabricated and its electronic transport properties are investigated. It shows a typical p-type field-effect-transistor (FET) behavior and nonlinearities in the source current-source bias characteristics. The network also exhibits incomplete turn-off and a small mobility. These characteristics are explained by the fact that the network is a mixture of metallic and semiconducting SWCNTs connecting with one another. Various cross junctions such as SWCNT (semiconducting) SWCNT (metallic) are the source of nonlinearities and the small mobility. Incomplete turn-off can be explained by the parallel conduction paths consisting of metallic SWCNTs which are insensitive to the gate bias. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：744 / 746
页数：3
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