Electrical transport properties in a single-walled carbon nanotube network

被引:1
|
作者
Snoussi, Karim [1 ]
Vakhshouri, Amin [2 ]
Okimoto, Haruya [3 ]
Takenobu, Taishi [4 ]
Iwasa, Yoshihiro [5 ]
Maruyama, Shigeo [6 ]
Hashimoto, Katsushi [1 ,2 ]
Hirayama, Yoshiro [1 ,2 ]
机构
[1] JST ERATO Nucl Spin Elect Project, Sendai, Miyagi 9800845, Japan
[2] Tohoku Univ, Dept Phys, Sendai, Miyagi 9808578, Japan
[3] Yamagata Univ, Dept Polymer Sci & Engn, Yamagata 9808577, Japan
[4] Waseda Univ, Dept Appl Phys, Tokyo 1698555, Japan
[5] Univ Tokyo, Sch Engn, Tokyo 1138656, Japan
[6] Univ Tokyo, Dept Mech Engn, Tokyo 1138656, Japan
关键词
carbon nanotube network; electrical transport properties; Mott variable-range hopping; quantum interference; RANGE-HOPPING REGIME; MAGNETORESISTANCE;
D O I
10.1002/pssc.201100298
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We measured and analysed the electronic transport properties of a single-walled carbon nanotube (SWCNT) network on which the nanotubes were deposited by an inkjet method. The SWCNT network showed an Ohmic behaviour down to a temperature T of 0.5 K. Moreover, the resistance of the SWCNT network exhibited a temperature dependence which indicated a Mott variable-range hopping transport mechanism. A localisation length was extracted and estimated to be between 3.6 and 11 nm; this indicated that the SWCNT sample constituted a 3D network. The magnetoresistance reached a minimum for a certain value of the magnetic field B-min. With decreasing the temperature, B-min tended linearly to 0 T. This observation was interpreted as the suppression of a quantum interference process between electronic hopping paths through neighbouring defects of the SWCNT network. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页数:4
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