SiN-based platform toward monolithic integration in photonics and electronics

被引：7

作者：

Xiong, Wenjuan ^{[1
,2
]}

Wang, Guilei ^{[1
,2
,3
]}

Li, Junfeng ^{[1
]}

Zhao, Chao ^{[1
,2
]}

Wang, Wenwu ^{[1
]}

Radamson, Henry H. ^{[1
,2
,3
,4
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Guangdong Greater Bay Area Inst Integrated Circui, Res & Dev Ctr Optoelect Hybrid IC, Guangzhou 510535, Guangdong, Peoples R China

[4] Mid Sweden Univ, Dept Elect Design, Holmgatan 10, S-85170 Sundsvall, Sweden

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2021年 / 32卷 / 01期

关键词：

MACH-ZEHNDER INTERFEROMETER; WAVE-GUIDES; FLUORESCENCE MICROSCOPY; SILICON PHOTONICS; GRATING COUPLER; LIGHT-EMISSION; GERMANIUM; GE; TECHNOLOGY; GENERATION;

D O I：

10.1007/s10854-020-04909-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents a review of silicon nitride applications in Si photonics and electronics. As the one of the prominent photonics platform, it owes excellent characteristics in optical communication that is complimentary in performance to the silicon-on-insulator (SOI) photonics. In addition, silicon nitride plays also an important role in realizing germanium laser because of its unique behavior in tuning strain. The induced strain varies from high tensile to compressive stress. The induced strain improves the carrier transport in the channel of nFETs or pFETs. The strain provides also the possibility in adjusting the bandstructure of germanium and converts the germanium from indirect-to-direct band-gap material which is fundamental in obtain germanium laser.

引用

页码：1 / 18

页数：18

共 50 条

[1] SiN-based platform toward monolithic integration in photonics and electronics
Wenjuan Xiong
Guilei Wang
Junfeng Li
Chao Zhao
Wenwu Wang
Henry H. Radamson
[J]. Journal of Materials Science: Materials in Electronics, 2021, 32 : 1 - 18
[2] Unconventional Monolithic Electronics in a Conventional Silicon Photonics Platform
Zanetto, Francesco
Toso, Fabio
Crico, Monica
Morichetti, Francesco
Melloni, Andrea
Ferrari, Giorgio
Sampietro, Marco
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (10) : 4993 - 4998
[3] Integration of Electronics and Photonics on Monolithic Silicon to Improve the Performance of Conventional Electronics
Gebreyesus, Hagos
Alemu, Getachew
[J]. 2017 IEEE AFRICON, 2017, : 639 - 643
[4] Toward chipscale integration of electronics, photonics, and plasmonics
Dalton, Larry
[J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2017, 254
[5] III-V-IV INTEGRATION TOWARD ELECTRONICS AND PHOTONICS CONVERGENCE ON A SILICON PLATFORM
Lau, Kei May
Li, Qiang
[J]. 2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2014,
[6] Monolithic Integration of Silicon Quantum Photonics and Electronics in a 45nm SOI CMOS Foundry Platform
Kramnik, Danielius
Wang, Imbert
Cabanillas, Josep M. Fargas
Ramesh, Anirudh
Gluhovic, Dorde
Buchbinder, Sidney
Zarkos, Panagiotis
Adamopoulos, Christos
Kumar, Prem
Popovic, Milos A.
Stojanovic, Vladimir M.
[J]. 2024 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION, OFC, 2024,
[7] Monolithic integration of Opto-electronics by silicon photonics foundry service
Li, Shuxia
Tarr, N. Garry
Ye, Winnie N.
[J]. SMART PHOTONIC AND OPTOELECTRONIC INTEGRATED CIRCUITS XXI, 2019, 10922
[8] On sin-based responses to divine hiddenness
Baker-Hytch, Max
[J]. RELIGIOUS STUDIES, 2023,
[9] Photonics and Electronics Integration
Fedeli, J. -M.
Ben Bakir, B.
Grenouillet, L.
Marris-Morini, D.
Vivien, L.
[J]. SILICON PHOTONICS II: COMPONENTS AND INTEGRATION, 2011, 119 : 217 - 249
[10] Integration of Photonics and Electronics
Smit, Meint
Williams, Kevin
van der Tol, Jos
[J]. 2019 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC), 2019, 62 : 29 - 34

← 1 2 3 4 5 →