Preparation of TiFe thin films by pulsed ion beam evaporation

被引：0

作者：

Suematsu, H ^{[1
]}

Saikusa, T ^{[1
]}

Suzuki, T ^{[1
]}

Jiang, WH ^{[1
]}

Yatsui, K ^{[1
]}

机构：

[1] Nagaoka Univ Technol, Extreme Energy Dens Res Inst, Nagaoka, Niigata 9402188, Japan

来源：

SURFACE ENGINEERING 2001 - FUNDAMENTALS AND APPLICATIONS | 2001年 / 697卷

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Thin films of titanium iron (TiFe) were prepared by a pulsed ion-beam evaporation (IBE) method. A pulsed ion beam of proton accelerated at I MV (peak) with a pulse width of 50 ns and a current of 70 kA was focused on TiFe alloy targets. Soda lime glass substrates were placed in front of the targets. Phases in the thin films were identified by X-ray diffraction (XRD). XRD results revealed that the thin films deposited on the glass substrates consist of a TiFe phase. Crystallized Ti-Fe thin films without oxides were successfully obtained. Surface roughness of the thin film was 0.16 mum.

引用

下载

页码：183 / 188

页数：6

共 50 条

[21] PREPARATION AND CHARACTERISTICS OF ZNS THIN-FILMS BY INTENSE PULSED ION-BEAM
SHIMOTORI, Y
YOKOYAMA, M
ISOBE, H
HARADA, S
MASUGATA, K
YATSUI, K
JOURNAL OF APPLIED PHYSICS, 1988, 63 (03) : 968 - 970
[22] Preparation of B4C thin film by intense pulsed ion-beam evaporation
Kitajima, K.
Suzuki, T.
Jiang, W.
Yatsui, K.
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40 (2 B): : 1030 - 1034
[23] Preparation of B4C thin film by intense pulsed ion-beam evaporation
Kitajima, K
Suzuki, T
Jiang, WH
Yatsui, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (2B): : 1030 - 1034
[24] Aration of crystalline Si1-xGex thin films by pulsed ion-beam evaporation
Suematsu, H
Iwashita, R
Arikado, T
Uchitomi, N
Yang, SC
Jiang, WH
Yatsui, K
BEAMS 2002, 2002, 650 : 417 - 420
[25] Pulsed ion-beam evaporation for thin-film deposition
Jiang, W.
Ide, K.
Kitayama, S.
Suzuki, T.
Yatsui, K.
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40 (2 B): : 1026 - 1029
[26] Pulsed ion-beam evaporation for thin-film deposition
Jiang, WH
Ide, K
Kitayama, S
Suzuki, T
Yatsui, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (2B): : 1026 - 1029
[27] Preparation of SrAl2O4:Eu,Dy phosphor thin films on organic substrates by pulsed ion-beam evaporation
Honda, N
Suzuki, T
Yunogami, T
Suematsu, H
Jiang, WH
Yatsui, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (1B): : 695 - 697
[28] Preparation of SrAl2O4:Eu,Dy phosphor thin films on organic substrates by pulsed ion-beam evaporation
Honda, N., 1600, Japan Society of Applied Physics (44):
[29] Preparation of iridium silicide thin films by means of electron beam evaporation
Kurt, R
Pitschke, W
Heinrich, A
Schumann, J
Wetzig, K
PROCEEDINGS ICT'97 - XVI INTERNATIONAL CONFERENCE ON THERMOELECTRICS, 1997, : 303 - 306
[30] QUICK DEPOSITION OF ZNS-MN ELECTROLUMINESCENT THIN-FILMS BY INTENSE, PULSED, ION-BEAM EVAPORATION
SHIMOTORI, Y
YOKOYAMA, M
HARADA, S
MASUGATA, K
YATSUI, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (03): : 468 - 472

← 1 2 3 4 5 →