Preparation of TiFe thin films by pulsed ion beam evaporation

被引：0

作者：

Suematsu, H ^{[1
]}

Saikusa, T ^{[1
]}

Suzuki, T ^{[1
]}

Jiang, WH ^{[1
]}

Yatsui, K ^{[1
]}

机构：

[1] Nagaoka Univ Technol, Extreme Energy Dens Res Inst, Nagaoka, Niigata 9402188, Japan

来源：

SURFACE ENGINEERING 2001 - FUNDAMENTALS AND APPLICATIONS | 2001年 / 697卷

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Thin films of titanium iron (TiFe) were prepared by a pulsed ion-beam evaporation (IBE) method. A pulsed ion beam of proton accelerated at I MV (peak) with a pulse width of 50 ns and a current of 70 kA was focused on TiFe alloy targets. Soda lime glass substrates were placed in front of the targets. Phases in the thin films were identified by X-ray diffraction (XRD). XRD results revealed that the thin films deposited on the glass substrates consist of a TiFe phase. Crystallized Ti-Fe thin films without oxides were successfully obtained. Surface roughness of the thin film was 0.16 mum.

引用

页码：183 / 188

页数：6

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