Stretchable Organic Thin-Film Transistors Fabricated on Wavy-Dimensional Elastomer Substrates Using Stiff-Island Structures

被引:30
|
作者
Choi, Jeong-Seon [1 ,2 ]
Park, Chan Woo [1 ]
Na, Bock Soon [1 ]
Lim, Sang Chul [1 ]
Lee, Sang Seok [1 ]
Cho, Kyoung-Ik [1 ]
Chu, Hye Yong [1 ]
Koo, Jae Bon [1 ]
Jung, Soon-Won [1 ]
Yoon, Sung-Min [2 ]
机构
[1] Elect & Telecommun Res Inst, Components & Mat Res Lab, Taejon 305700, South Korea
[2] Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Gyeonggi Do 446701, South Korea
关键词
Stretchable electronics; organic thin-film transistor (OTFT); solution process; polydimethysiloxane elastomer; wavy-dimensional structure;
D O I
10.1109/LED.2014.2324559
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Stretchable organic thin-film transistors (OTFTs) were fabricated on the polydimethysiloxane (PDMS) elastomer substrates by employing the wavy-dimensional and polyimide stiff-island structures. A low-temperature solution process was also designed to obtain high strain profiles. The endurable maximum strains were estimated to be 2.28, 9.70, and 9.32% for the OTFTs formed on the flat, 1D-, and 2D-wavy PDMS elastomers, respectively. The field-effect mobilities were obtained to be 5 similar to 7 x 10(-4) cm(2) V-1 s(-1) for all devices and they did not exhibit any degradation under the stretchable conditions before the fracture. The results suggest that the proposed methodologies were quite suitable for high-performance stretchable OTFTs.
引用
收藏
页码:762 / 764
页数:3
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