Structure of Er-O complexes in crystalline Si -: art. no. 153310

被引：25
|
作者：
d'Acapito, F
Mobilio, S
Scalese, S
Terrasi, A
Franzó, G
Priolo, F
机构：
[1] European Synchrotron Radiat Facil, CRG, GILDA, INFM,OGG, F-38043 Grenoble, France
[2] Univ Roma Tre, Dipartimento Fis, I-00146 Rome, Italy
[3] CNR, IMM, I-95121 Catania, Italy
[4] Univ Catania, INFM, I-95129 Catania, Italy
[5] Univ Catania, Dipartimento Fis, I-95129 Catania, Italy
[6] Ist Nazl Fis Nucl, Lab Nazl Frascati, I-00044 Frascati, Roma, Italy
来源：
PHYSICAL REVIEW B | 2004年 / 69卷 / 15期
关键词：
D O I：
10.1103/PhysRevB.69.153310
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The local structure around Er3+ ions in Er+O doped silicon has been investigated by extended x-ray absorption spectroscopy. By comparing samples obtained by molecular-beam epitaxy and ion implantation a common structure comes out. Er is linked to five or six O atoms at around 2.24 Angstrom and there is a well defined Er-O-Si bond angle of 135degrees and an Er-Si separation of 3.6 Angstrom. The Er-Si distance is appreciably longer than that found in the more stable structures from ab-initio calculations and a discussion on the possible site for Er is presented.
引用
收藏
页码：153310 / 1
页数：4
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