Investigations of the properties of Zn1-xCrxO thin films grown by RF magnetron sputtering

被引：12
|
作者：
Elanchezhiyan, J. [1 ]
Bhuvana, K. P. [2 ]
Gopalakrishnan, N. [2 ]
Shin, B. C. [1 ]
Lee, W. J. [1 ]
Balasubramanian, T. [2 ]
机构：
[1] Dong Eui Univ, Elect Ceram Ctr, Pusan 614714, South Korea
[2] Natl Inst Technol, Dept Phys, Thin Film Lab, Tiruchirappalli 620015, Tamil Nadu, India
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2009年 / 478卷 / 1-2期
关键词：
Thin films; Depositions; Magnetic materials; Atomic force microscopy; HIGH-TEMPERATURE FERROMAGNETISM; ABSENCE;
D O I：
10.1016/j.jallcom.2008.11.118
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
This work investigated the properties of Cr doped ZnO (Zn1-xCrxO) thin films with different doping concentrations (x = 0.05, 0.15, 0.30) on a Si (10 0) substrate using RF magnetron sputtering. These films have been characterized by powder X-ray diffraction (XRD), atomic force microscopy (AFM) and vibrating sample magnetometer (VSM) measurements to investigate structural, morphological and magnetic properties. XRD results reveal that the wurtzite structure deviates for the films with higher concentrations of Cr. The VSM measurements show the ferromagnetic behaviour for all the Cr doped ZnO films at room temperature. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：45 / 48
页数：4
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