Improved the chrage transfer for highly efficient photoelectrochemical water oxidation: the case of WO3 and BiVO4

被引：5
|
作者：
Wiriyachailerd, C. [1 ]
Horprathum, M. [2 ]
Eiamchai, P. [2 ]
Ponchio, C. [1 ,3 ]
机构：
[1] Rajamangala Univ Technol Thanyaburi, Fac Sci & Technol, Dept Chem, Pathum Thani 12110, Thailand
[2] Natl Elect & Comp Technol Ctr, 112 Pahol Yothin Rd, Pathum Thani 12120, Thailand
[3] Rajamangala Univ Technol Thanyaburi, Adv Mat Design & Dev AMDD Res Unit, Inst Res & Dev, Klong 6, Thanyaburi, Thailand
来源：
MATERIALS TODAY-PROCEEDINGS | 2018年 / 5卷 / 06期
关键词：
Charge transfer; Photoelectrochemical; Water oxidation; Tungsten oxide; Bismisth vanadate; HYDROGEN GENERATION; O-2; EVOLUTION; FILMS; ENHANCEMENT; PERFORMANCE; H-2;
D O I：
10.1016/j.matpr.2018.02.032
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The tungsten oxide (WO3) and bismuth vanadate (BiVO4) thin films were successfully deposited on indium doped tin oxide (ITO) by dc reactive magnetron sputtering and spin coating technique, respectively. The physical structural were characterized by field-emission scanning electron microscopy (FE-SEM) and X-ray diffractometry (XRD). The photoelectrocatalytic water oxidation of ITO/WO3 and ITO/WO3/BiVO4 electrodes were compared under visible light irradiation. The double layer of WO3/BiVO4 thin film are present the enhancing efficiency of water oxidation comparing with single WO3 layer. The results showed the improvement of charge transfer by using heterojunction nanostructure semiconductor electrode in order to suppress the recombination effect and enhance an efficient of water splitting. (C) 2017 Elsevier Ltd. All rights reserved. Selection and/or Peer-review under responsibility of SACT 2016.
引用
收藏
页码：13874 / 13878
页数：5
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