A V-band variable gain amplifier with low phase variation using 90-nm CMOS technology

被引:4
|
作者
Tsai, Jeng-Han [1 ]
Wang, Jen-Wei [1 ]
Wu, Chung-Han [2 ]
机构
[1] Natl Taiwan Normal Univ, Dept Appl Elect Technol, Taipei 10610, Taiwan
[2] Natl Taiwan Univ, Grad Inst Commun Engn, Taipei 10617, Taiwan
关键词
CMOS; 60; GHz; variable gain amplifier; phase array system; LNA;
D O I
10.1002/mop.28485
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A V-band variable gain amplifier (VGA) with wide gain control range, low phase variation, and low return loss variation is designed and implemented on 90-nm CMOS process. Utilizing a phase compensation capacitor at the common gate transistor and a source degeneration inductor at the common source transistor of the cascode configuration, the VGA achieves gain control range of 15.8 dB with only 6.9 degrees transmission phase variation at 60 GHz via simple control mechanism. The maximum small signal gain is 15.8 dB at 60 GHz. In addition, the input/output return losses are insensitivity at different gain state of the VGA. (c) 2014 Wiley Periodicals, Inc.
引用
收藏
页码:1946 / 1949
页数:4
相关论文
共 50 条
  • [31] Design of a V-Band 20-dBm Wideband Power Amplifier Using Transformer-Based Radial Power Combining in 90-nm CMOS
    Chou, Cheng-Feng
    Hsiao, Yuan-Hung
    Wu, Yi-Ching
    Lin, Yu-Hsuan
    Wu, Chen-Wei
    Wang, Huei
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2016, 64 (12) : 4545 - 4560
  • [32] V-band 130 nm CMOS Multistage Amplifier Incorporating Gain-Boosting Technique
    Zhang, Ming-ming
    Wu, Hsien-Shun
    Tzuang, Ching-Kuang C.
    [J]. 2016 IEEE MTT-S INTERNATIONAL CONFERENCE ON NUMERICAL ELECTROMAGNETIC AND MULTIPHYSICS MODELING AND OPTIMIZATION (NEMO), 2016,
  • [33] A Gain Enhancement Structure Using 28-nm CMOS Process for V-band Power Amplifier Applications
    Chuang, Kai-Jie
    Bai, Wei-Ting
    Chen, Yu-Chun
    Lin, Wen-Jie
    Tsai, Jeng-Han
    Huang, Tian-Wei
    [J]. 2021 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT), 2021,
  • [34] Low power V-band low noise amplifier using 0.13-μm CMOS technology
    Wu, Chung-Yu
    Chen, Po-Hung
    [J]. 2007 14TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS 1-4, 2007, : 1328 - 1331
  • [35] A Wide Gain Control Range V-Band CMOS Variable-Gain Amplifier With Built-In Linearizer
    Yeh, Han-Chih
    Aloui, Sofiane
    Chiong, Chau-Ching
    Wang, Huei
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2013, 61 (02) : 902 - 913
  • [36] A V-Band Two-Element Phased-Array Receiver using Reflection-Type Vector Modulator in 90-nm CMOS Technology
    Lin, Chi-Hsien
    Huang, Hsuan-Yin
    Shen, Yi-En
    Lin, Tsung-Hsien
    Chang, Hong-Yeh
    [J]. 2015 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), VOLS 1-3, 2015,
  • [37] High Frequency Unity Gain Buffer in 90-nm CMOS Technology
    Li, Shuo
    Zhang, Xiaomeng
    Ren, Saiyu
    [J]. JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS, 2016, 25 (07)
  • [38] A K-Band Power Amplifier with Adaptive Bias in 90-nm CMOS
    Liu, Jenny Yi-Chun
    Chan, Chin-Tung
    Hsu, Shawn S. H.
    [J]. 2014 44TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2014, : 1376 - 1379
  • [39] A K-Band Power Amplifier with Adaptive Bias in 90-nm CMOS
    Liu, Jenny Yi-Chun
    Chan, Chin-Tung
    Hsu, Shawn S. H.
    [J]. 2014 9TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE (EUMIC), 2014, : 432 - 435
  • [40] A V-band Power Amplifier Using Marchand Balun for Power Combining in 90n-nm CMOS Process
    Chen, Juo-Chen
    Chang, Tong-Yu
    Chiang, Yen-Chung
    [J]. 2017 IEEE WIRELESS POWER TRANSFER CONFERENCE (WPTC 2017), 2017,