Rigorous channel temperature analysis verified for InAlN/AlN/GaN HEMT

被引：9

作者：

Florovic, M. ^{[1
]}

Szobolovszky, R. ^{[1
]}

Kovac, J., Jr. ^{[1
]}

Chvala, A. ^{[1
]}

Jacquet, J-C ^{[2
]}

Delage, S. L. ^{[2
]}

机构：

[1] Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, Inst Elect & Photon, Ilkovicova 3, Bratislava 81219, Slovakia

[2] III V Lab, Route Nozay, F-91460 Marcoussis, France

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2019年 / 34卷 / 06期

基金：

欧盟地平线“2020”;

关键词：

InAlN; GaN; FET; HEMT; temperature profile; dissipated power; ALGAN/GAN HEMTS;

D O I：

10.1088/1361-6641/ab1737

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes a novel method of average channel temperature and channel temperature profile determination is discussed in theoretical part and subsequently applied to InAlN/AlN/GaN HEMT using quasi-static I-V characterization supported by thermal 3D ELM simulations. Experimentally was determined HEMT source resistance and threshold voltage from low-power output and transfer I-V characteristics at different thermal chuck temperatures. The HEMT channel average temperature nearly 88 degrees C for dissipated power 2 W was calculated taking advantage of the drain current change analysis applied in recurrent differential form. Additionally, the HEMT channel temperature profile was simulated utilizing the calculated channel dissipated power density.

引用

页数：7

共 50 条

[1] Influence of AlN Interlayer on the Performance of InAlN/GaN HEMT
Babaya, Asmae
Bri, Seddik
Saadi, Adil
2018 INTERNATIONAL SYMPOSIUM ON ADVANCED ELECTRICAL AND COMMUNICATION TECHNOLOGIES (ISAECT), 2018,
[2] Temperature dependent DC characterization of InAlN/(AlN)/GaN HEMT for improved reliability
Takhar, K.
Gomes, U. P.
Ranjan, K.
Rathi, S.
Biswas, D.
INTERNATIONAL CONFERENCE ON MATERIALS SCIENCE AND TECHNOLOGY (ICMST 2012), 2015, 73
[3] InAlN/AlN/GaN HEMT器件特性研究
刘海琪
周建军
董逊
陈堂胜
固体电子学研究与进展, 2011, 31 (02) : 120 - 123
[4] InAlN/AlN/GaN HEMT电学特性仿真与分析
杨娟
张小玲
吕长志
微电子学, 2012, 42 (03) : 411 - 414
[5] The effect of ammonia flow in the AlN spacer on the electrical properties of InAlN/AlN/GaN HEMT structures
Gamarra, Piero
Lacam, Cedric
Magis, Michelle
Tordjman, Maurice
Poisson, Marie-Antoinette di Forte
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2012, 209 (01): : 21 - 24
[6] AlN/GaN and InAlN/GaN DBRs
Eljarrat A.
Estradé S.
Peiró F.
Advances in Imaging and Electron Physics, 2019, 209 : 101 - 133
[7] Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications
Murugapandiyan, P.
Mohanbabu, A.
Lakshmi, V. Rajya
Ramakrishnan, V. N.
Varghese, Arathy
Mohd, Wasim
Baskaran, S.
Kumar, R. Saravana
Janakiraman, V.
JOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES, 2020, 5 (02): : 192 - 198
[8] Electrical Characteristics and 2DEG Properties of Passivated InAlN/AlN/GaN HEMT
Amarnath, G.
Srinivas, G.
Lenka, T. R.
2015 INTERNATIONAL CONFERENCE ON COMPUTER COMMUNICATION AND INFORMATICS (ICCCI), 2015,
[9] Diamond overgrown InAlN/GaN HEMT
Alomari, M.
Dipalo, M.
Rossi, S.
Diforte-Poisson, M. -A.
Delage, S.
Carlin, J. -F.
Grandjean, N.
Gaquiere, C.
Toth, L.
Pecz, B.
Kohn, E.
DIAMOND AND RELATED MATERIALS, 2011, 20 (04) : 604 - 608
[10] The Sensing Mechanism of InAlN/GaN HEMT
Liu, Yanli
He, Xiao
Dong, Yan
Fu, Su
Liu, Yuhui
Chen, Dunjun
CRYSTALS, 2022, 12 (03)

← 1 2 3 4 5 →