Spin filtering magnetic modulation and spin-polarization switching in hybrid ferromagnet/semiconductor structures

被引：2
|
作者：
Xu HuaiZhe [1 ,2 ]
Wang LiYing [1 ,2 ]
Yan QiQi [1 ,2 ]
Zhang YaPing [3 ]
Zhang ShiChao [4 ]
机构：
[1] Beihang Univ, State Key Lab Software Dev Environm, Beijing 100191, Peoples R China
[2] Beihang Univ, Dept Phys, Beijing 100191, Peoples R China
[3] Univ Nottingham Ningbo, Fac Engn, Ningbo 315100, Zhejiang, Peoples R China
[4] Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
来源：
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY | 2014年 / 57卷 / 06期
关键词：
spin-dependent transport; spin polarization switch; magnetic manipulation; spin filter; 2-DIMENSIONAL ELECTRON-GAS; BARRIER; FIELD; MAGNETORESISTANCE; SPINTRONICS; GRAPHENE;
D O I：
10.1007/s11433-014-5433-1
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Electron spin-polarization modulation with a ferromagnetic strip of in-plane magnetization is analyzed in a hybrid ferromagnet/semiconductor filter device. The dependencies of electron spin-polarization on the strip's magnetization strength, width and position have been systematically investigated. A novel magnetic control spin-polarization switch is proposed by inserting a ferromagnetic metal (FM) strip eccentric in relation to off the center of the spin filter, which produces the first energy level spin-polarization reversal. It is believed to be of significant importance for the realization of semiconductor spintronics multiplevalue logic devices.
引用
收藏
页码：1057 / 1062
页数：6
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