A method to predict electromigration failure of metal lines

被引:17
|
作者
Sasagawa, K
Naito, K
Saka, M
Abé, H
机构
[1] Hirosaki Univ, Dept Intelligent Machines & Syst Engn, Hirosaki, Aomori 0368561, Japan
[2] Tohoku Univ, Dept Mech Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan
[3] Tohoku Univ, Aoba Ku, Sendai, Miyagi 9808577, Japan
关键词
D O I
10.1063/1.371652
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new calculation method of atomic flux divergence (AFD(gen)) due to electromigration has recently been proposed by considering all the factors on void formation, and AFD(gen) has been identified as a parameter governing void formation by observing agreement of the numerical prediction of the void with experiment. In this article, a method to predict the electromigration failure of metal lines was proposed by using AFD(gen). Lifetime and failure site in a polycrystalline line were predicted by numerical simulation of the processes of void initiation, its growth to line failure, where the change in distributions of current density and temperature with void growth was taken into account. The usefulness of this prediction method was verified by the experiment where the angled aluminum line was treated. The failure location was determined by the line shape and the operating condition. The present simulation accurately predicted the lifetime as well as the failure location of the metal line. (C) 1999 American Institute of Physics. [S0021-8979(99)08823-4].
引用
收藏
页码:6043 / 6051
页数:9
相关论文
共 50 条
  • [31] DEPENDENCE OF ELECTROMIGRATION LIFETIME ON FILM THICKNESS AND LINEWIDTH OF SUBMICRON METAL LINES
    KWOK, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (03) : C120 - C120
  • [32] A proposal for a standard procedure for moderately accelerated electromigration tests on metal lines
    Scorzoni, A
    Impronta, M
    De Munari, I
    Fantini, F
    MICROELECTRONICS RELIABILITY, 1999, 39 (05) : 615 - 626
  • [33] ELECTROMIGRATION FAILURE
    LLOYD, JR
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (11) : 7601 - 7604
  • [34] Biased resistor network model for electromigration failure and related phenomena in metallic lines
    Pennetta, C
    Alfinito, E
    Reggiani, L
    Fantini, F
    DeMunari, I
    Scorzoni, A
    PHYSICAL REVIEW B, 2004, 70 (17) : 1 - 15
  • [35] ELECTROMIGRATION FAILURE DUE TO INTERFACIAL DIFFUSION IN FINE AL-ALLOY LINES
    HU, CK
    SMALL, MB
    RODBELL, KP
    STANIS, C
    BLAUNER, P
    HO, PS
    APPLIED PHYSICS LETTERS, 1993, 62 (09) : 1023 - 1025
  • [36] SHAPE CHANGES OF VOIDS IN BAMBOO LINES - A NEW ELECTROMIGRATION FAILURE-MECHANISM
    KRAFT, O
    MOCKL, UE
    ARZT, E
    QUALITY AND RELIABILITY ENGINEERING INTERNATIONAL, 1995, 11 (04) : 279 - 283
  • [37] Finite element analysis of the effects of geometry and microstructure on electromigration in confined metal lines
    Liu, YK
    Cox, CL
    Diefendorf, RJ
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (07) : 3600 - 3608
  • [38] Electromigration in AlCu lines: comparison of Dual Damascene and metal reactive ion etching
    Filippi, RG
    Gribelyuk, MA
    Joseph, T
    Kane, T
    Sullivan, TD
    Clevenger, LA
    Costrini, G
    Gambino, J
    Iggulden, RC
    Kiewra, EW
    Ning, XJ
    Ravikumar, R
    Schnabel, RF
    Stojakovic, G
    Weber, SJ
    Gignac, LM
    Hu, CK
    Rath, DL
    Rodbell, KP
    THIN SOLID FILMS, 2001, 388 (1-2) : 303 - 314
  • [39] DYNAMIC FUSE MODEL FOR ELECTROMIGRATION FAILURE OF POLYCRYSTALLINE METAL-FILMS
    BRADLEY, RM
    WU, K
    PHYSICAL REVIEW E, 1994, 50 (02): : R631 - R634