Electronic transport properties of MoS2 nanoribbons embedded in butadiene solvent

被引:10
|
作者
Pezo, Armando [1 ,2 ]
Lima, Matheus P. [3 ]
Costa, Marcio [1 ]
Fazzio, Adalberto [1 ]
机构
[1] CNPEM, Brazilian Nanotechnol Natl Lab LNNano, Rua Giusepe Maximo Scalfaro 10000, BR-13083970 Campinas, SP, Brazil
[2] Fed Univ ABC, CCNH Ctr Nat Sci & Humanities, Santo Andre, SP, Brazil
[3] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP, Brazil
基金
巴西圣保罗研究基金会;
关键词
DENSITY-FUNCTIONAL THEORY; TOTAL-ENERGY CALCULATIONS; CHARGE-TRANSPORT; MONOLAYER; CARBON; EXFOLIATION; ENERGETICS; NANOSHEETS; GAS;
D O I
10.1039/c9cp01590f
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Transition metal dichalcogenides (TMDCs) are promising materials for applications in nanoelectronics and correlated fields, where their metallic edge states play a fundamental role in the electronic transport. In this work, we investigate the transport properties of MoS2 zigzag nanoribbons under a butadiene (C4H6) atmosphere, as this compound has been used to obtain MoS2 flakes by exfoliation. We use density functional theory combined with non- equilibrium Green's function techniques, in a methodology contemplating disorder and different coverages. Our results indicate a strong modulation of the TMDC electronic transport properties driven by butadiene molecules anchored at their edges, producing the suppression of currents due to a backscattering process. Our results indicate a high sensitivity of the TMDC edge states. Thus, the mechanisms used to reduce the dimensionality of MoS2 considerably modify its transport properties.
引用
收藏
页码:11359 / 11366
页数:8
相关论文
共 50 条
  • [21] Electronic and magnetic properties of MoS2 nanoribbons with sulfur line vacancy defects
    Han, Yang
    Zhou, Jian
    Dong, Jinming
    [J]. APPLIED SURFACE SCIENCE, 2015, 346 : 470 - 476
  • [22] Geometries and electronic properties of armchair MoS2 nanoribbons with single vacancy defect
    Lin, Chun-Dan
    Zhao, Hong-Wei
    Yang, Zhen-Qing
    Shao, Chang-Jin
    [J]. Rengong Jingti Xuebao/Journal of Synthetic Crystals, 2015, 44 (04): : 1036 - 1040
  • [23] Electronic and transport properties of heterophase compounds based on MoS2
    D. G. Kvashnin
    L. A. Chernozatonskii
    [J]. JETP Letters, 2017, 105 : 250 - 254
  • [24] Electronic and Transport Properties of Heterophase Compounds Based on MoS2
    Kvashnin, D. G.
    Chernozatonskii, L. A.
    [J]. JETP LETTERS, 2017, 105 (04) : 250 - 254
  • [25] First-Principles Calculations of Electronic Properties of Defective Armchair MoS2 Nanoribbons
    Shao Yan
    Ouyang Fang-Ping
    Peng Sheng-Lin
    Liu Qi
    Jia Zhi-An
    Zou Hui
    [J]. ACTA PHYSICO-CHIMICA SINICA, 2015, 31 (11) : 2083 - 2090
  • [26] Effects of line defects on spin-dependent electronic transport of zigzag MoS2 nanoribbons
    Li, Xin-Mei
    Long, Meng-Qiu
    Cui, Li-Ling
    Yang, Kai-Wei
    Zhang, Dan
    Ding, Jia-Feng
    Xu, Hui
    [J]. AIP ADVANCES, 2016, 6 (01):
  • [27] Electronic Structure and Edge Modification of Armchair MoS2 Nanoribbons
    Yang Zhi-Xiong
    Yang Jin-Xin
    Liu Qi
    Xie Yu-Xin
    Xiong Xiang
    Ouyang Fang-Ping
    [J]. ACTA PHYSICO-CHIMICA SINICA, 2013, 29 (08) : 1648 - 1654
  • [28] Fundamental insights into the electronic structure of zigzag MoS2 nanoribbons
    Yu, Shansheng
    Zheng, Weitao
    [J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2016, 18 (06) : 4675 - 4683
  • [29] Electronic and Transport Properties in Defective MoS2: Impact of Sulfur Vacancies
    Gali, Sai Manoj
    Pershin, Anton
    Lherbier, Aurelien
    Charlier, Jean-Christophe
    Beljonne, David
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2020, 124 (28): : 15076 - 15084
  • [30] Strain-tunable electronic and transport properties of MoS2 nanotubes
    Weifeng Li
    Gang Zhang
    Meng Guo
    Yong-Wei Zhang
    [J]. Nano Research, 2014, 7 : 518 - 527