共 50 条
- [41] First-Principles Calculations of Band Offsets at Heterovalent ε-Ge/ InxAl1-xAs Interfaces PHYSICAL REVIEW APPLIED, 2018, 10 (04):
- [42] Characterization of metamorphic inxAl1-xAs/GaAs buffer layers using reciprocal space mapping Journal of Applied Physics, 2007, 101 (06):
- [44] High direct energy band gaps determination in InxAl1-xAs coherently grown on InP JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (01): : 243 - 245
- [50] TEMPERATURE-DEPENDENCE OF MOLECULAR-BEAM EPITAXIAL-GROWTH RATES FOR INXGA1-XAS AND INXAL1-XAS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (09): : 1441 - 1442