Concentration profiles of antimony-doped shallow layers in silicon

被引：9

作者：

Alzanki, T ^{[1
]}

Gwilliam, R ^{[1
]}

Emerson, N ^{[1
]}

Tabatabaian, Z ^{[1
]}

Jeynes, C ^{[1
]}

Sealy, BJ ^{[1
]}

机构：

[1] Univ Surrey, Sch Elect & Phys Sci, Adv Technol Inst, Guildford GU2 7XH, Surrey, England

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1088/0268-1242/19/6/012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Antimony implants at 40 keV and at a dose of 4 x 10(14) cm(-2) have been characterized for their potential use in n-type shallow junction formation. The electrical characterization was done using sheet resistivity and Hall effect measurements. High electrical activities (>80%) and low sheet resistance values (<200 Omega/square) were obtained for annealing temperatures below 800 degreesC. A novel differential Hall effect technique was used to obtain doping profiles at a depth resolution down to 1 nm, with a comparison made between these and Rutherford backscattering (RBS) measurements of the atomic profile as a function of annealing temperature. The antimony shows insignificant diffusion for annealing temperatures of 800 degreesC and below, with junction depths of about 60 nm. Electrical activation correlates well with the substitutional fraction of antimony determined by RBS.

引用

页码：728 / 732

页数：5

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