Surface morphology induced by homoepitaxial growth on a vicinal Si(111) surface

被引：2
|
作者：
Yokoyama, T
Yokotsuka, T
Sumita, I
Nakajima, M
机构：
[1] Matsushita Res. Inst. Tokyo, Inc., Kawasaki 214, Higashimita, Tama-ku
来源：
SURFACE SCIENCE | 1996年 / 357卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(96)00277-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have studied homoepitaxial growth on a vicinal Si(111) surface consisting of (111) terraces and (331) facets by scanning tunneling microscopy. After the growth around 500 degrees C, there remained (111) terraces and (331) facets. However, above 500 degrees C, the (331) facets changed into individual steps of bilayer height at the upper part; these facets disappear at 600 degrees C. The change of the surface morphology was deduced to be the result of the growth kinetics difference between these two surfaces.
引用
收藏
页码：855 / 857
页数：3
相关论文
共 50 条
  • [21] SURFACE MASS-TRANSPORT OF AG AND IN ON VICINAL SI(111)
    WU, NJ
    YASUNAGA, H
    NATORI, A
    SURFACE SCIENCE, 1992, 260 (1-3) : 75 - 84
  • [22] Coarsening Kinetics of a Spinodally Decomposed Vicinal Si(111) Surface
    Kim, Yongsam
    Jo, M. H.
    Kim, T. C.
    Yang, C. W.
    Kim, J. W.
    Hwang, J. S.
    Noh, D. Y.
    Kim, N. D.
    Chung, J. W.
    PHYSICAL REVIEW LETTERS, 2009, 102 (15)
  • [23] Transformation of surface structures on vicinal Si(111) during heating
    Homma, Y
    Hibino, H
    Kunii, Y
    Ogino, T
    SURFACE SCIENCE, 2000, 445 (2-3) : 327 - 334
  • [24] Influence of substrate misorientation on the surface morphology of homoepitaxial diamond (111) films
    Tokuda, Norio
    Ogura, Masahiko
    Matsumoto, Tsubasa
    Yamasaki, Satoshi
    Inokuma, Takao
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2016, 213 (08): : 2051 - 2055
  • [25] Thermal reaction of iron with a Si(111) vicinal surface: Surface ordering and growth of CsCl-type iron silicide
    Wawro, A
    Suto, S
    Czajka, R
    Kasuya, A
    PHYSICAL REVIEW B, 2003, 67 (19):
  • [26] Novel transition mechanism of surface electromigration induced step structure on vicinal Si(111) surfaces
    Suga, N
    Kimpara, J
    Wu, NJ
    Yasunaga, H
    Natori, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (7B): : 4412 - 4416
  • [27] Cu induced step bunching on a Si(111) vicinal surface studied by reflection electron microscopy
    Takahashi, Y.
    Minoda, H.
    Tanishiro, Y.
    Yagi, K.
    Surface Science, 1999, 433 : 512 - 516
  • [28] Step bunching to step-meandering transition induced by electromigration on Si(111) vicinal surface
    Leroy, F.
    Karashanova, D.
    Dufay, M.
    Debierre, J. -M.
    Frisch, T.
    Metois, J. -J.
    Mueller, P.
    SURFACE SCIENCE, 2009, 603 (03) : 507 - 512
  • [29] Cu induced step bunching on a Si(111) vicinal surface studied by reflection electron microscopy
    Takahashi, Y
    Minoda, H
    Tanishiro, Y
    Yagi, K
    SURFACE SCIENCE, 1999, 433 : 512 - 516
  • [30] An effect of vicinal surface morphology on adsorbate structure:: Yb growth on [1 1 (2)over-bar]-tilt Si(111)
    Kuzmin, M
    Laukkanen, P
    Vanne, RL
    Väyrynen, IJ
    SURFACE SCIENCE, 2002, 515 (2-3) : 471 - 482
12345