Surface morphology induced by homoepitaxial growth on a vicinal Si(111) surface

被引：2
|
作者：
Yokoyama, T
Yokotsuka, T
Sumita, I
Nakajima, M
机构：
[1] Matsushita Res. Inst. Tokyo, Inc., Kawasaki 214, Higashimita, Tama-ku
来源：
SURFACE SCIENCE | 1996年 / 357卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(96)00277-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have studied homoepitaxial growth on a vicinal Si(111) surface consisting of (111) terraces and (331) facets by scanning tunneling microscopy. After the growth around 500 degrees C, there remained (111) terraces and (331) facets. However, above 500 degrees C, the (331) facets changed into individual steps of bilayer height at the upper part; these facets disappear at 600 degrees C. The change of the surface morphology was deduced to be the result of the growth kinetics difference between these two surfaces.
引用
收藏
页码：855 / 857
页数：3
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