Blue emission at atomically sharp 1D heterojunctions between graphene and h-BN

被引:28
|
作者
Kim, Gwangwoo [1 ]
Yeol, Kyung [2 ]
Park, Minsu [3 ]
Kim, Minsu [1 ]
Jeon, Jonghyuk [4 ]
Song, Jinouk [5 ]
Barrios-Vargas, Jose Eduardo [6 ]
Sato, Yuta [7 ]
Lin, Yung-Chang [7 ]
Suenaga, Kazu [7 ]
Roche, Stephan [8 ,9 ,10 ]
Yoo, Seunghyup [5 ]
Sohn, Byeong-Hyeok [4 ]
Jeon, Seokwoo [3 ]
Shin, Hyeon Suk [1 ,2 ,11 ]
机构
[1] Ulsan Natl Inst Sci & Technol UNIST, Dept Chem, Ulsan 44919, South Korea
[2] Ulsan Natl Inst Sci & Technol UNIST, Dept Energy Engn, Ulsan 44919, South Korea
[3] Korea Adv Inst Sci & Technol KAIST, Dept Mat Sci & Engn, Daejeon 34141, South Korea
[4] Seoul Natl Univ, Dept Chem, Seoul 08826, South Korea
[5] Korea Adv Inst Sci & Technol KAIST, Sch Elect Engn, Daejeon 34141, South Korea
[6] Univ Nacl Autonoma Mexico, Dept Fis & Quim Teor, Fac Quim, Mexico City 04510, DF, Mexico
[7] Natl Inst Adv Ind Sci & Technol, Nanomat Res Inst, 1-1-1 Higashi, Tsukuba, Ibaraki 3058565, Japan
[8] CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Barcelona 08193, Spain
[9] Barcelona Inst Sci & Technol, Campus UAB, Barcelona 08193, Spain
[10] ICREA Inst Catalana Recerca & Estudis Avancats, Barcelona 08010, Spain
[11] Ulsan Natl Inst Sci & Technol UNIST, Low Dimens Carbon Mat Ctr, Ulsan 44919, South Korea
基金
新加坡国家研究基金会; 欧盟地平线“2020”;
关键词
HEXAGONAL BORON-NITRIDE; SINGLE-PHOTON EMISSION; QUANTUM DOTS; EPITAXIAL-GROWTH; POINT-DEFECTS; HETEROSTRUCTURES; EMITTERS; STATES;
D O I
10.1038/s41467-020-19181-2
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Atomically sharp heterojunctions in lateral two-dimensional heterostructures can provide the narrowest one-dimensional functionalities driven by unusual interfacial electronic states. For instance, the highly controlled growth of patchworks of graphene and hexagonal boron nitride (h-BN) would be a potential platform to explore unknown electronic, thermal, spin or optoelectronic property. However, to date, the possible emergence of physical properties and functionalities monitored by the interfaces between metallic graphene and insulating h-BN remains largely unexplored. Here, we demonstrate a blue emitting atomic-resolved heterojunction between graphene and h-BN. Such emission is tentatively attributed to localized energy states formed at the disordered boundaries of h-BN and graphene. The weak blue emission at the heterojunctions in simple in-plane heterostructures of h-BN and graphene can be enhanced by increasing the density of the interface in graphene quantum dots array embedded in the h-BN monolayer. This work suggests that the narrowest, atomically resolved heterojunctions of in-plane two-dimensional heterostructures provides a future playground for optoelectronics. Here, the authors explore the blue photoluminescence signal arising from the interface between graphene and h-BN arranged in in-plane heterostructures, and fabricate a blue light emitting device utilizing the heterojunction as the emitting layer.
引用
收藏
页数:6
相关论文
共 50 条
  • [21] Heterostrain and temperature-tuned twist between graphene/h-BN bilayers
    Yang, Xing
    Zhang, Bin
    SCIENTIFIC REPORTS, 2023, 13 (01)
  • [22] Heterostrain and temperature-tuned twist between graphene/h-BN bilayers
    Xing Yang
    Bin Zhang
    Scientific Reports, 13
  • [23] Electron emission efficiency of graphene/h-BN/2D-semiconductor heterostructure: theoretical analysis and experimental verification
    Song, Guichen
    Chen, Yicong
    Li, Zhibing
    Deng, Shaozhi
    Chen, Jun
    PHYSICA SCRIPTA, 2025, 100 (03)
  • [24] Role of structural symmetry breaking in the structurally induced robust superlubricity of graphene and h-BN homo- and heterojunctions
    Ansari, Narjes
    Nazari, Fariba
    Illas, Francesc
    CARBON, 2016, 96 : 911 - 918
  • [25] Density functional study on hybrid graphene/h-BN 2D sheets
    Thakur, Vishal
    Kumar, Narender
    Rao, B. Keshav
    Verma, Mohan L.
    Sahu, Homendra D.
    Verma, Swati
    Choubey, Anil Kumar
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2021, 133
  • [26] Effect of E-beam irradiation on graphene sandwiched between h-BN layers
    Iqbal, M. W.
    Hussain, G.
    Kamran, M. A.
    Aslam, I
    Alharbi, T.
    Azam, S.
    Majid, A.
    Razzaq, S.
    MICROELECTRONIC ENGINEERING, 2019, 216
  • [27] Low-Noise Mid-Infrared Photodetection in BP/h-BN/Graphene van der Waals Heterojunctions
    Lu, Qin
    Yu, Li
    Liu, Yan
    Zhang, Jincheng
    Han, Genquan
    Hao, Yue
    MATERIALS, 2019, 12 (16)
  • [28] Atomistic understanding of the lateral growth of graphene from the edge of an h-BN domain: towards a sharp in-plane junction
    Han, Nannan
    Liu, Hongsheng
    Zhang, Junfeng
    Gao, Junfeng
    Zhao, Jijun
    NANOSCALE, 2017, 9 (10) : 3585 - 3592
  • [29] Effects of single vacancy defects on 1/f noise in graphene/h-BN FETs
    Wu, Ting
    Alharbi, Abdullah
    Taniguchi, Takashi
    Watanabe, Kenji
    Shahrjerdi, Davood
    2018 76TH DEVICE RESEARCH CONFERENCE (DRC), 2018,
  • [30] Engineering 2D Material Exciton Line Shape with Graphene/h-BN Encapsulation
    Woo, Steffi Y.
    Shao, Fuhui
    Arora, Ashish
    Schneider, Robert
    Wu, Nianjheng
    Mayne, Andrew J.
    Ho, Ching-Hwa
    Och, Mauro
    Mattevi, Cecilia
    Reserbat-Plantey, Antoine
    Moreno, Alvaro
    Sheinfux, Hanan Herzig
    Watanabe, Kenji
    Taniguchi, Takashi
    de Vasconcellos, Steffen Michaelis
    Koppens, Frank H. L.
    Niu, Zhichuan
    Stephan, Odile
    Kociak, Mathieu
    de Abajo, F. Javier Garcia
    Bratschitsch, Rudolf
    Konecna, Andrea
    Tizei, Luiz H. G.
    NANO LETTERS, 2024, 24 (12) : 3678 - 3685