Formation of I2-type basal-plane stacking faults in In0.25Ga0.75N multiple quantum wells grown on a (10<(1)overbar>1) semipolar GaN template

被引：4

作者：

Li, Yueliang ^{[1
]}

Qi, Haoyuan ^{[1
]}

Meisch, Tobias ^{[2
]}

Hocker, Matthias ^{[3
]}

Thonke, Klaus ^{[3
]}

Scholz, Ferdinand ^{[2
]}

Kaiser, Ute ^{[1
]}

机构：

[1] Univ Ulm, Electron Microscopy Grp Mat Sci, Cent Facil Electron Microscopy, Albert Einstein Allee 11, D-89081 Ulm, Germany

[2] Univ Ulm, Inst Optoelect, Albert Einstein Allee 45, D-89081 Ulm, Germany

[3] Univ Ulm, Inst Quantum Matter, Albert Einstein Allee 45, D-89081 Ulm, Germany

来源：

APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 02期

关键词：

GALLIUM NITRIDE; MOVPE;

D O I：

10.1063/1.4974050

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, I-2-type basal-plane stacking faults (BSFs) were observed in In0.25Ga0.75N multiple quantum wells (MQWs) grown on a (10 (1) over bar 1) semipolar GaN template by high-resolution transmission electron microscopy. The structure and formation mechanisms of the I-2-type BSFs at the GaN-InGaN interface were investigated in detail. The formation of the I-2-type BSFs contributes to lattice mismatch accommodation within the InGaN QWs. Their density varies in different regions of the sample due to the inhomogeneous distribution of the In content in the InGaN layer. The relationship between the In content in the InxGa1-xN layer and the I-2-type BSFs is discussed. Published by AIP Publishing.

引用

页数：4

共 2 条

[1] Effect of Basal-plane Stacking Faults on X-ray Diffraction of Non-polar (11(2)over-bar0) a-plane GaN Films Grown on (1(1)over-bar02) r-plane Sapphire Substrates
Kim, Ji Hoon
Hwang, Sung-Min
Baik, Kwang Hyeon
Park, Jung Ho
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2014, 14 (05) : 557 - 565
[2] Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn1-xMgxO layers by molecular beam epitaxy
Xia, Y.
Brault, J.
Nemoz, M.
Teisseire, M.
Vinter, B.
Leroux, M.
Chauveau, J. -M.
APPLIED PHYSICS LETTERS, 2011, 99 (26)

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