A 0.1 to 2.7-GHz SOI SP8T antenna switch adopting body self-adapting bias technique for low-loss high-power applications

A low-loss high-power single-pole 8-throw antenna switch adopting body self-adapting bias technique in a 0.18-m thick-film partially depleted silicon-on-insulator complementary metal-oxide-semiconductor process is implemented for multimode multiband cellular applications. A topology with symmetric port design is developed. We employ the body-contacted field-effect transistor to handle high power level and obtain low harmonic distortion. However, the conventional bias method for body-contacted field-effect transistor leads to poor insertion loss (IL), serious imbalanced voltage division, and large die size. Therefore, a new body self-adapting bias scheme is adopted to improve the IL and power handling capability with die area reward by removing the employment of extra biasing resistor and voltage supply at the body. The presented silicon-on-insulator antenna switch utilizing the new body bias strategy reveals similar harmonic performance as a conventional switch version, thanks to the analogous DC bias to the gate and body, while it exhibits effectively lower IL, imbalanced voltage division, and die area. The measured IL and 0.1-dB compression point (P-0.1dB), at 1.9/2.7GHz, are roughly 0.52/0.82dB and 39.2/36.9dBm, respectively. The overall IL and P-0.1dB are apparently improved by approximately 0.05 to 0.13dB and 0.5 to 0.8dBm compared with the conventional version.