Reverse-Recovery Analysis of Parallel-Connected pin Diodes Using a Physics-Based Device Model

被引：0

作者：

Horiguchi, Takeshi ^{[1
]}

Sugimoto, Takayuki ^{[2
]}

Tominaga, Shinji ^{[2
]}

Urushibata, Hiroaki ^{[2
]}

Fujita, Hideaki ^{[2
]}

Akagi, Hirofumi ^{[2
]}

Kinouchi, Shin-Ichi ^{[2
]}

Oi, Takeshi ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, Adv Technol R&D Ctr, Tokyo, Japan

[2] Tokyo Inst Technol, Dept Elect & Elect Engn, Tokyo 152, Japan

来源：

ELECTRONICS AND COMMUNICATIONS IN JAPAN | 2014年 / 97卷 / 04期

关键词：

reverse recovery characteristics; pin diode; physics model; parallel connection; I-N-DIODES; PARAMETER EXTRACTION;

D O I：

10.1002/ecj.11499

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a reverse-recovery analysis of parallel-connected pin diodes using a physics-based device model. Since the pin diode model is based on a physical equation, the excess carrier distribution in the drift layer is estimated. A precise device model enables us to understand the transient characteristics of the parallel-connected pin diodes. We investigated the reverse-recovery characteristics of parallel-connected pin diodes by using a physics-based pin diode model. A difference in the wiring inductance or device temperature between the two pin diodes causes a transient current imbalance. Complicated reverse-recovery current waveforms are observed under both conditions-a difference in the wiring inductance and a difference in the device temperature. They result from a difference in the starting time of forming each depletion layer between the two pin diodes. Simulation results are in good agreement with experimental ones within an error of 10% in terms of the reverse-recovery loss. We find that a precise physics-based pin diode model is very useful when designing a power electronics apparatus.

引用

页码：80 / 89

页数：10

共 21 条

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