Non-reciprocal reflection band in CdMnTe

被引:2
|
作者
Safonova, L [1 ]
Brazis, R [1 ]
Narkowicz, R [1 ]
机构
[1] Lithuania Acad Sci, Inst Semicond Phys, LT-2600 Vilnius, Lithuania
关键词
semiconductors; exchange and superexchange; light absorption and reflection; luminescence; magnetic measurements;
D O I
10.1016/j.jallcom.2003.07.036
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Non-reciprocal reflection observation at oblique incidence of p-polarized light is reported in CdMnTe crystals with a Mn molar fraction of 20%. at lattice temperature of 2K, in magnetic fields up to 7T in the Voigt configuration. The new feature of reflection is a broad non-reciprocity band between the Zeeman lines related to excitons. Experimental results are compared with a novel modeling approach accounting both for the discrete excitonic levels and valence-to-conduct ion band transitions controlled by the steady magnetic field. The model is found to be in reasonable agreement with experiments. Exciton energies. line widths, band edge broadening and other material parameters are elucidated. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:177 / 179
页数:3
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