共 23 条
- [22] a-Si:H deposition from SiH4 and Si2H6 rf-discharges: Pressure and temperature dependence on film growth in relation to the α-γ discharge transition Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 (11): : 2041 - 2052
- [23] A-SI-H DEPOSITION FROM SIH4 AND SI2H6 RF-DISCHARGES - PRESSURE AND TEMPERATURE-DEPENDENCE OF FILM GROWTH IN RELATION TO THE ALPHA-GAMMA DISCHARGE TRANSITION JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (11): : 2041 - 2052