High-power laser diodes at various wavelengths

被引：2
|
作者：
Emanuel, MA
Skidmore, JA
Beach, RJ
机构：
来源：
IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MIDINFRARED | 1997年 / 3001卷
关键词：
laser diode; InAlGaAs; AlGaAs; GOD; Yb:S-FAP; Yb:YAG; PDT;
D O I：
10.1117/12.273775
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
High power laser diodes at various wavelengths are described. First, performance and reliability of an optimized large transverse mode diode structure at 808 and 941 nm are presented. Next, data are presented on a 9.5 kW peak power array at 900 nm having a narrow emission bandwidth suitable for pumping Yb:S-FAP laser materials. Finally, results on a fiber-coupled laser diode array at similar to 730 nm are presented.
引用
收藏
页码：2 / 6
页数：5
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