Microscale Soft Patterning for Solution Processable Metal Oxide Thin Film Transistors

被引：11

作者：

Jung, Sang Wook ^{[1
,2
]}

Chae, Soo Sang ^{[1
]}

Park, Jee Ho ^{[1
]}

Oh, Jin Young ^{[1
]}

Bhang, Suk Ho ^{[3
]}

Baik, Hong Koo ^{[1
]}

Lee, Tae Il ^{[4
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, 134 Shinchong Dong, Seoul 120750, South Korea

[2] Samsung Display Co Ltd, Tangjeong 336741, Chuncheongnam D, South Korea

[3] Sungkyunkwan Univ, Sch Chem Engn, 2066 Seobu Ro, Suwon, Gyeonggi Do, South Korea

[4] Gachon Univ, Dept BioNano Technol, Songnam 461701, Gyeonggi Do, South Korea

来源：

ACS APPLIED MATERIALS & INTERFACES | 2016年 / 8卷 / 11期

关键词：

metal oxide semiconductor; thin film transistor; metal patterning; soft-lithography; contact printing; SEMICONDUCTORS; TRANSPARENT; TEMPERATURE; FABRICATION; ADHESION; ARRAYS;

D O I：

10.1021/acsami.5b10847

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We introduce a microscale soft pattering (MSP) route utilizing contact printing of chemically inert sub-nanometer thick low molecular weight (LMW) poly(dimethylsiloxane) (PDMS) layers. These PDMS layers serve as a release agent layer between the n-type Ohmic metal and metal oxide semiconductors (MOSs) and provide a layer that protects the MOS from water in the surrounding environment. The feasibility of our MSP route was experimentally demonstrated by fabricating solution processable In2O3, IZO, and IGZO TFTs with aluminum (Al), a typical n-type Ohmic metal. We have demonstrated patterning gaps as small as 13 mu m. The TFTs fabricated using MSP showed higher field-effect-mobility and lower hysteresis in comparison with those made using conventional photolithography.

引用

页码：7205 / 7211

页数：7

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