Coherent Transitions in Doped-Germanium Using Intense Few-Cycle THz Pulses

被引：0

作者：

Nagai, Masaya ^{[1
]}

Kamon, Yutaka ^{[1
]}

Minowa, Yosuke ^{[1
]}

Matsubara, Eiichi ^{[1
]}

Ashida, Masaaki ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Suita, Osaka 565, Japan

来源：

2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated nonlinear THz response of a doped semiconductor using intense THz pulses with different cycle-number. Coherent transitions between impurity levels were observed using few-cycle pulses, while ionization of impunities was driven by monocycle pulses.

引用

页数：2

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