Coherent Transitions in Doped-Germanium Using Intense Few-Cycle THz Pulses

被引：0
|
作者：
Nagai, Masaya [1 ]
Kamon, Yutaka [1 ]
Minowa, Yosuke [1 ]
Matsubara, Eiichi [1 ]
Ashida, Masaaki [1 ]
机构：
[1] Osaka Univ, Grad Sch Engn Sci, Suita, Osaka 565, Japan
来源：
2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR) | 2013年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigated nonlinear THz response of a doped semiconductor using intense THz pulses with different cycle-number. Coherent transitions between impurity levels were observed using few-cycle pulses, while ionization of impunities was driven by monocycle pulses.
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页数：2
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