10.6 μm Infrared light photoinduced insulator-to-metal transition in vanadium dioxide

被引:5
|
作者
Sui, Xiubao [1 ]
He, Weiji [1 ]
Zuo, Chao [1 ]
Chen, Qian [1 ]
Gu, Guohua [1 ]
机构
[1] NUST, Sch Elect Engn & Optoelect Technol, Nanjing 210094, Jiangsu, Peoples R China
基金
高等学校博士学科点专项科研基金;
关键词
Vanadium dioxide; 10.6 mu m Infrared light; Photoinduced phase transition; THIN-FILMS; DEPOSITION; VO2;
D O I
10.1016/j.infrared.2014.02.009
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Vanadium dioxide has excellent phase transition characteristic. Before or after phase transition, its optical, electrical, magnetic characteristic hangs hugely. It has a wide application prospect in many areas. Now, the light which can make vanadium dioxide come to pass photoinduced phase transition range from soft X-ray to medium infrared light (6.9 mu m, 180 meV). However, whether 10.6 mu m (117 meV) long wave infrared light can make vanadium dioxide generate photoinduced phase transition has been not studied. In this paper, we researched the response characteristic of vanadium dioxide excited by 10.6 mu m infrared light. We prepared the vanadium dioxide and test the changes of vanadium dioxide thin film's transmittance to 632.8 nm infrared light when the thin film is irradiate by CO2 laser. We also test the resistivity of vanadium dioxide. Excluding the effect of thermal induced phase transition, we find that the transmittance of vanadium dioxide thin film to 632.8 nm light and resistivity both changes when irradiating by 10.6 mu m laser. This indicates that 10.6 mu m infrared light can make the vanadium dioxide come to pass photoinduced phase transition. The finding makes vanadium has a potential application in recording the long-wave infrared hologram and making infrared detector with high resolution. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:103 / 107
页数:5
相关论文
共 50 条
  • [21] METAL-INSULATOR TRANSITION IN VANADIUM DIOXIDE
    ZYLBERSZTEJN, A
    MOTT, NF
    PHYSICAL REVIEW B, 1975, 11 (11) : 4383 - 4395
  • [22] Nonthermal nature of photoinduced insulator-to-metal transition in NbO2
    Rana, Rakesh
    Klopf, J. Michael
    Grenzer, Joerg
    Schneider, Harald
    Helm, Manfred
    Pashkin, Alexej
    PHYSICAL REVIEW B, 2019, 99 (04)
  • [23] Highly Tunable Negative Differential Resistance Device Based on Insulator-to-Metal Phase Transition of Vanadium Dioxide
    Kim, Jong-Hyun
    Kim, Seung-Geun
    Kim, Seung-Hwan
    Han, Kyu-Hyun
    Kim, Jiyoung
    Yu, Hyun-Yong
    ACS APPLIED MATERIALS & INTERFACES, 2023, 15 (26) : 31608 - 31616
  • [24] Study of the resonant frequencies of silicon microcantilevers coated with vanadium dioxide films during the insulator-to-metal transition
    Rua, Armando
    Fernandez, Felix E.
    Hines, Melissa A.
    Sepulveda, Nelson
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (05)
  • [25] INSULATOR-TO-METAL TRANSITION IN POLYTHIOPHENE
    LAVARDA, FC
    DOSSANTOS, MC
    GALVAO, DS
    LAKS, B
    PHYSICAL REVIEW B, 1994, 49 (02): : 979 - 983
  • [26] Photoinduced insulator-to-metal transition and surface statistics of VO2 monitored by elastic light scattering
    Lysenko, Sergiy
    Fernandez, Felix
    Rua, Armando
    Sepulveda, Nelson
    Aparicio, Joaquin
    APPLIED OPTICS, 2015, 54 (08) : 2141 - 2150
  • [27] INSULATOR-TO-METAL TRANSITION IN POLYANILINE
    EPSTEIN, AJ
    GINDER, JM
    RICHTER, AF
    HUANG, W
    MACDIARMID, AG
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1986, 192 : 315 - INOR
  • [28] Insulator-to-metal transition on polyselenophene
    Marçal, N
    Laks, B
    INTERNATIONAL JOURNAL OF QUANTUM CHEMISTRY, 2003, 95 (03) : 230 - 236
  • [29] INSULATOR-TO-METAL TRANSITION IN POLYANILINE
    EPSTEIN, AJ
    GINDER, JM
    ZUO, F
    BIGELOW, RW
    WOO, HS
    TANNER, DB
    RICHTER, AF
    HUANG, WS
    MACDIARMID, AG
    SYNTHETIC METALS, 1987, 18 (1-3) : 303 - 309
  • [30] INSULATOR-TO-METAL TRANSITION IN POLYANILINE
    GINDER, JM
    RICHTER, AF
    MACDIARMID, AG
    EPSTEIN, AJ
    SOLID STATE COMMUNICATIONS, 1987, 63 (02) : 97 - 101