Vanadium dioxide;
10.6 mu m Infrared light;
Photoinduced phase transition;
THIN-FILMS;
DEPOSITION;
VO2;
D O I:
10.1016/j.infrared.2014.02.009
中图分类号:
TH7 [仪器、仪表];
学科分类号:
0804 ;
080401 ;
081102 ;
摘要:
Vanadium dioxide has excellent phase transition characteristic. Before or after phase transition, its optical, electrical, magnetic characteristic hangs hugely. It has a wide application prospect in many areas. Now, the light which can make vanadium dioxide come to pass photoinduced phase transition range from soft X-ray to medium infrared light (6.9 mu m, 180 meV). However, whether 10.6 mu m (117 meV) long wave infrared light can make vanadium dioxide generate photoinduced phase transition has been not studied. In this paper, we researched the response characteristic of vanadium dioxide excited by 10.6 mu m infrared light. We prepared the vanadium dioxide and test the changes of vanadium dioxide thin film's transmittance to 632.8 nm infrared light when the thin film is irradiate by CO2 laser. We also test the resistivity of vanadium dioxide. Excluding the effect of thermal induced phase transition, we find that the transmittance of vanadium dioxide thin film to 632.8 nm light and resistivity both changes when irradiating by 10.6 mu m laser. This indicates that 10.6 mu m infrared light can make the vanadium dioxide come to pass photoinduced phase transition. The finding makes vanadium has a potential application in recording the long-wave infrared hologram and making infrared detector with high resolution. (C) 2014 Elsevier B.V. All rights reserved.
机构:
Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01328 Dresden, GermanyHelmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01328 Dresden, Germany
Rana, Rakesh
Klopf, J. Michael
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Helmholtz Zentrum Dresden Rossendorf, Inst Radiat Phys, D-01328 Dresden, GermanyHelmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01328 Dresden, Germany
Klopf, J. Michael
Grenzer, Joerg
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Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01328 Dresden, GermanyHelmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01328 Dresden, Germany
Grenzer, Joerg
Schneider, Harald
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Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01328 Dresden, GermanyHelmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01328 Dresden, Germany
Schneider, Harald
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机构:
Helm, Manfred
Pashkin, Alexej
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Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01328 Dresden, GermanyHelmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01328 Dresden, Germany
机构:
Korea Univ, Dept Semicond Syst Engn, 145 Anam Ro, Seoul, South KoreaKorea Univ, Dept Semicond Syst Engn, 145 Anam Ro, Seoul, South Korea
Kim, Jong-Hyun
Kim, Seung-Geun
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Korea Univ, Dept Semicond Syst Engn, 145 Anam Ro, Seoul, South KoreaKorea Univ, Dept Semicond Syst Engn, 145 Anam Ro, Seoul, South Korea
Kim, Seung-Geun
Kim, Seung-Hwan
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Korea Inst Sci & Technol KIST, Ctr Spintron, 5 Hwarang Ro 14 Gil, Seoul 02792, South KoreaKorea Univ, Dept Semicond Syst Engn, 145 Anam Ro, Seoul, South Korea
Kim, Seung-Hwan
Han, Kyu-Hyun
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Korea Univ, Sch Elect Engn, 145 Anam Ro, Seoul 02841, South KoreaKorea Univ, Dept Semicond Syst Engn, 145 Anam Ro, Seoul, South Korea
Han, Kyu-Hyun
Kim, Jiyoung
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Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USAKorea Univ, Dept Semicond Syst Engn, 145 Anam Ro, Seoul, South Korea
Kim, Jiyoung
Yu, Hyun-Yong
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Korea Univ, Dept Semicond Syst Engn, 145 Anam Ro, Seoul, South Korea
Korea Univ, Sch Elect Engn, 145 Anam Ro, Seoul 02841, South KoreaKorea Univ, Dept Semicond Syst Engn, 145 Anam Ro, Seoul, South Korea