An analytical, physics-based linear current-voltage model for hot-carrier damaged LDD nMOSFETs

被引：0

作者：

Liu, SS

Hu, MC

Jang, SL

机构：

[1] Department of Electronic Engineering, Natl. Taiwan Institute of Technology, Section 4, Taipei 106, 43, Keelung Road

来源：

SOLID-STATE ELECTRONICS | 1997年 / 41卷 / 05期

关键词：

D O I：

10.1016/S0038-1101(96)00255-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：793 / 797

页数：5

共 48 条

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