An analytical, physics-based linear current-voltage model for hot-carrier damaged LDD nMOSFETs

被引：0
|
作者：
Liu, SS
Hu, MC
Jang, SL
机构：
[1] Department of Electronic Engineering, Natl. Taiwan Institute of Technology, Section 4, Taipei 106, 43, Keelung Road
来源：
SOLID-STATE ELECTRONICS | 1997年 / 41卷 / 05期
关键词：
D O I：
10.1016/S0038-1101(96)00255-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
[No abstract available]
引用
收藏
页码：793 / 797
页数：5
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