Ultrafast control of light emission from a quantum-well semiconductor microcavity using picosecond strain pulses

被引：34

作者：

Scherbakov, A. V. ^{[1
,2
]}

Berstermann, T. ^{[1
]}

Akimov, A. V. ^{[2
]}

Yakovlev, D. R. ^{[1
,2
]}

Beaudoin, G. ^{[3
]}

Bajoni, D. ^{[3
]}

Sagnes, I. ^{[3
]}

Bloch, J. ^{[3
]}

Bayer, M. ^{[1
]}

机构：

[1] Tech Univ Dortmund, D-44227 Dortmund, Germany

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[3] CNRS, LPN, F-91460 Marcoussis, France

来源：

PHYSICAL REVIEW B | 2008年 / 78卷 / 24期

基金：

俄罗斯基础研究基金会;

关键词：

acousto-optical effects; excitons; gallium arsenide; high-speed optical techniques; III-V semiconductors; microcavities; phonons; photoluminescence; polaritons; semiconductor quantum wells;

D O I：

10.1103/PhysRevB.78.241302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A picosecond strain wave packet of subterahertz acoustic phonons is generated in a metal film by optical excitation with a femtosecond laser pulse and injected into a quantum well containing a GaAs-based planar microcavity in the strong-coupling regime. The strain pulse induces a dynamical energy shift of the quantum-well exciton resonance. This results in an ultrafast modulation of the photoluminescence spectrum from the lower polariton branch.

引用

页数：4

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