Three-dimensional molecular simulation of chromatographic separations

被引:14
|
作者
McGuffin, VL
Wu, PR
机构
关键词
D O I
10.1016/0021-9673(95)00784-9
中图分类号
Q5 [生物化学];
学科分类号
071010 ; 081704 ;
摘要
A three-dimensional stochastic computer simulation has been developed in order to provide a detailed understanding of chromatographic separations. In this simulation, the migration of individual molecules is established through diffusion and convection within a fluid phase that is in contact with a surface, Molecular interaction and, hence, retention may arise by partitioning into permeable surfaces or by adsorption at solid surfaces. The molecular distribution and the corresponding zone profile may be examined and characterized by means of statistical moments at any specified time or spatial position during the simulation. This simulation provides a powerful and versatile model with which to characterize transport phenomena in complex chromatographic separation systems.
引用
收藏
页码:3 / 17
页数:15
相关论文
共 50 条
  • [41] Three-dimensional simulation of a compressible magnetoconvection
    Kawasaki, S
    Kusano, K
    Miyoshi, T
    Nishikawa, K
    ICPP 96 CONTRIBUTED PAPERS - PROCEEDINGS OF THE 1996 INTERNATIONAL CONFERENCE ON PLASMA PHYSICS, VOLS 1 AND 2, 1997, : 966 - 969
  • [42] Three-dimensional simulation of ion implantation
    Lorenz, J
    Tietzel, K
    Bourenkov, A
    Ryssel, H
    SISPAD '96 - 1996 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 1996, : 23 - 24
  • [43] Three-dimensional simulation of sacrificial etching
    Cervenka, Johann
    Ceric, Hajdin
    Selberherr, Siegfried
    MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2008, 14 (4-5): : 665 - 671
  • [44] Simulation of three-dimensional turbulent flames
    Thevenin, Dominique
    DIRECT AND LARGE-EDDY SIMULATION V, PROCEEDINGS, 2004, 9 : 335 - 342
  • [45] Three-dimensional simulation of ion implantation
    Tietzel, K
    Bourenkov, A
    Lorenz, J
    Ryssel, H
    SOFTWARE FOR ELECTRICAL ENGINEERING ANALYSIS AND DESIGN, 1996, : 337 - 345
  • [46] Three-dimensional Simulation of Wheel Topography
    Feng, Q.
    Wang, Q.
    Ren, C. Z.
    ADVANCES IN GRINDING AND ABRASIVE TECHNOLOGY XVI, 2011, 487 : 149 - 154
  • [47] Simulation of a three-dimensional electrorheological suspension
    Li, J
    Shul, JP
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (09) : 7312 - 7317
  • [48] A framework for three-dimensional simulation of morphogenesis
    Cickovski, TM
    Huang, CB
    Chaturvedi, R
    Glimm, T
    Hentschel, HGE
    Alber, MS
    Glazier, JA
    Newman, SA
    Izaguirre, JA
    IEEE-ACM TRANSACTIONS ON COMPUTATIONAL BIOLOGY AND BIOINFORMATICS, 2005, 2 (04) : 273 - 288
  • [49] Three-dimensional simulation of a HFCVD reactor
    Mankelevich, YA
    Rakhimov, AT
    Suetin, NV
    DIAMOND AND RELATED MATERIALS, 1998, 7 (08) : 1133 - 1137
  • [50] IF signals simulation of three-dimensional radar
    Dept. of Electronic Engineering, Nanjing Univ. of Aeronautics and Astronautics, Nanjing, 210016, China
    不详
    J Syst Eng Electron, 2008, 3 (486-492):