Characterization of strained-Si/SiGe/Si heterostructures with capacitance methods

被引：1
|
作者：
Yarykin, Nikolai [1 ]
Zhang, Renhua [2 ]
Rozgonyi, George [2 ]
机构：
[1] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Moscow Region, Russia
[2] North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
来源：
MICRO- AND NANOELECTRONICS 2005 | 2006年 / 6260卷
关键词：
heterostructures; SiGe; strained Si; CV; DLTS;
D O I：
10.1117/12.683403
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The DLTS and admittance measurements were performed on the MOS and Schottky diodes formed on the strained-Si/SiGe/Si heterostructures. Several DLTS features were observed and analyzed, and properties of the peculiar D1 peak were studied in detail. Temperature dependence of the SiGe layer conductivity was extracted from the C(T) and G(T) curves. The analysis of ability of the DLTS technique to detect defects in the thin top layer is given.
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页数：9
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