Characterization of strained-Si/SiGe/Si heterostructures with capacitance methods

被引：1
|
作者：
Yarykin, Nikolai [1 ]
Zhang, Renhua [2 ]
Rozgonyi, George [2 ]
机构：
[1] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Moscow Region, Russia
[2] North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
来源：
MICRO- AND NANOELECTRONICS 2005 | 2006年 / 6260卷
关键词：
heterostructures; SiGe; strained Si; CV; DLTS;
D O I：
10.1117/12.683403
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The DLTS and admittance measurements were performed on the MOS and Schottky diodes formed on the strained-Si/SiGe/Si heterostructures. Several DLTS features were observed and analyzed, and properties of the peculiar D1 peak were studied in detail. Temperature dependence of the SiGe layer conductivity was extracted from the C(T) and G(T) curves. The analysis of ability of the DLTS technique to detect defects in the thin top layer is given.
引用
收藏
页数：9
相关论文
共 50 条
  • [1] Effect of strained-Si layer thickness on dislocation distribution and SiGe relaxation in strained-Si/SiGe heterostructures
    Lu, Jinggang
    Rozgonyi, George
    Seacrist, Mike
    Chaumont, Michelle
    Campion, Alan
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (07)
  • [2] Effect of strained-Si layer thickness on dislocation distribution and SiGe relaxation in strained-Si/SiGe heterostructures
    Lu, Jinggang
    Rozgonyi, George
    Seacrist, Mike
    Chaumont, Michelle
    Campion, Alan
    Journal of Applied Physics, 2008, 104 (07):
  • [3] Impact ionization in strained-Si/SiGe heterostructures
    Waldron, NS
    Pitera, AJ
    Lee, ML
    Fitzgerald, EA
    del Alamo, JA
    2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 2003, : 813 - 816
  • [4] Effect of Strained-Si Layer Thickness on Dislocation Distribution and SiGe Relaxation in Thin Buffer Layer Strained-Si/SiGe Heterostructures
    Lu, Jinggang
    Rozgonyi, George
    Seacrist, Mike
    SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES, 2008, 16 (10): : 293 - +
  • [5] Advanced SOI MOSFET's with strained-Si/SiGe heterostructures
    Mizuno, T
    Sugiyama, N
    Kurobe, A
    Takagi, S
    IEICE TRANSACTIONS ON ELECTRONICS, 2001, E84C (10): : 1423 - 1430
  • [6] Properties of ion-implanted strained-Si/SiGe heterostructures
    Sugii, N
    Morioka, J
    Ishidoya, Y
    Koyama, K
    Inada, T
    FIFTH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY, 2005, : 7 - 10
  • [7] Advanced SOI MOSFET's with strained-Si/SiGe heterostructures
    Mizuno, T.
    Sugiyama, N.
    Kurobe, A.
    Takagi, S.
    IEICE Transactions on Electronics, 2001, E84-C (10) : 1423 - 1430
  • [8] In-plane strain fluctuation in strained-Si/SiGe heterostructures
    Sawano, K
    Koh, S
    Shiraki, Y
    Usami, N
    Nakagawa, K
    APPLIED PHYSICS LETTERS, 2003, 83 (21) : 4339 - 4341
  • [9] EBIC characterization of strained Si/SiGe heterostructures
    E. B. Yakimov
    R. H. Zhang
    G. A. Rozgonyi
    M. Seacrist
    Semiconductors, 2007, 41 : 402 - 406
  • [10] EBIC characterization of strained Si/SiGe heterostructures
    Yakimov, E. B.
    Zhang, R. H.
    Rozgonyi, G. A.
    Seacrist, M.
    SEMICONDUCTORS, 2007, 41 (04) : 402 - 406
12345