Integral triple-crystals' X-ray diffractometry of monocrystals containing microdefects

被引:0
|
作者
Nemoshkalenko, VV [1 ]
Molodkin, VB [1 ]
Kislovs'ky, YM [1 ]
Olikhovs'ky, SI [1 ]
Gryshchenko, TA [1 ]
Kogut, MT [1 ]
Pervak, KV [1 ]
机构
[1] GV Kurdyumov Met Phys Inst, UA-03680 Kiev, Ukraine
来源
METALLOFIZIKA I NOVEISHIE TEKHNOLOGII | 2000年 / 22卷 / 02期
关键词
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Theoretical and experimental foundations of the integral triple-crystals' X-ray diffractometry are created, and the experimental results are obtained to show possibilities of this method. In the proposed variants of the method, the separated measurements of coherent and diffuse components of the total integrated reflection power (TIRP) and their thickness dependences are realized in addition to TIRP measurements. The separation of coherent and diffuse TIRP components provides the increased sensitivity to structural imperfections of crystalline lattice in comparison with the methods of TIRP thickness dependences.
引用
收藏
页码:42 / 50
页数:9
相关论文
共 50 条
  • [31] MICRODEFECTS INVESTIGATED BY X-RAY TOPOGRAPHY
    SHULPINA, IL
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1993, 26 (4A) : A82 - A85
  • [32] Imaging of microdefects in ZnGeP2 single crystals by X-ray topography
    Lei, Zuotao
    Okunev, Alexei
    Zhu, Chongqiang
    Verozubova, Galina
    Yang, Chunghui
    [J]. JOURNAL OF CRYSTAL GROWTH, 2020, 534
  • [33] X-RAY REFLECTION CURVES OF CRYSTALS WITH RANDOMLY DISTRIBUTED MICRODEFECTS IN THE BRAGG CASE
    HOLY, V
    [J]. ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 1983, 39 (SEP): : 642 - 646
  • [34] Microdefects in semiconductor single crystals revealed by X-ray diffuse scattering method
    Chtcherbatchev, KD
    Bublik, VT
    [J]. DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997, 1998, 160 : 187 - 190
  • [35] Effect of defects in the monochromator on profiles of a triple-crystal x-ray diffractometry
    Kyslovskyy, E. M.
    Reshetnyk, O. V.
    Vladimirova, T. P.
    Molodkin, V. B.
    Olikhovskii, S. J.
    Sheludchenko, B. V.
    Seredenko, R. F.
    Skakunova, O. S.
    [J]. METALLOFIZIKA I NOVEISHIE TEKHNOLOGII, 2007, 29 (05): : 701 - 710
  • [36] CHARACTERIZATION OF BORON IMPLANTED SILICON BY X-RAY TRIPLE-CRYSTAL DIFFRACTOMETRY
    ZAUMSEIL, P
    WINTER, U
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 120 (01): : 67 - 75
  • [37] FLUORESCENT SOURCES FOR X-RAY DIFFRACTOMETRY
    PARRISH, W
    LOWITZSCH, K
    SPIELBERG, N
    [J]. ACTA CRYSTALLOGRAPHICA, 1958, 11 (06): : 400 - 405
  • [38] X-ray topography studies of microdefects in silicon
    Kowalski, G
    Lefeld-Sosnowska, M
    Gronkowski, J
    Borowski, J
    [J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1999, 357 (1761): : 2707 - 2719
  • [39] SYNCHROTRON X-RAY POLYCRYSTALLINE DIFFRACTOMETRY
    PARRISH, W
    HART, M
    HUANG, TC
    [J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1986, 19 : 92 - 100
  • [40] X-ray diffractometry with a microfocus source
    Michaelsen, Carsten
    Wiesmann, Joerg
    Hasse, Bernd
    Preckwinkel, Uwe
    Cordes, Holger
    Yang, Ning
    [J]. ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2008, 64 : C171 - C171