Defects in Ge-doped Cz-Si annealed under high stress

被引：7
|
作者：
Misiuk, A.
Yang, Deren
Surma, B.
Londos, C. A.
Bak-Misiuk, J.
Andrianakis, A.
机构：
[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland
[2] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[3] Inst Elect Mat Technol, PL-01919 Warsaw, Poland
[4] Univ Athens, Athens 15784, Greece
[5] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2006年 / 9卷 / 1-3期
关键词：
Si-Ge; hydrostatic pressure; thermal donor; defect;
D O I：
10.1016/j.mssp.2006.01.031
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of stress induced by enhanced hydrostatic pressure (HP, up to 1.1 GPa) at annealing up to 1400 K of Ge-doped Czochralski silicon (Cz-Si:Ge) on a creation of thermal donors (TDs) and of oxygen-related defects is investigated by spectroscopic (FTIR) photoluminescence and electrical methods. While the presence of Ge results in reduced generation of TDs in Cz-Si:Ge annealed at 723 K under 10(5) Pa, HP applied at 698-748 K produces TDs in a much enhanced concentration. The treatments under 1.1 GPa at 1070-1270 K result in increasing, for up to 20%, precipitation of oxygen. An explanation of the HP effect on a creation of defects in Cz-Si:Ge is proposed. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码：82 / 87
页数：6
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